Stacked PA power control

• US 10,187,013 B2
• Filed: 01/29/2018
• Issued: 01/22/2019
• Est. Priority Date: 03/06/2017
• Status: Active Grant

• Current Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Original Assignee: pSemi Corporation (Murata Manufacturing Co Limited)
• Inventors: Kovac, David
• Primary Examiner(s): Choe, Henry
• Application Number:
  US15/882,933
• Publication Number:
  US 20180254746A1
• Time in Patent Office: 358 Days
• Field of Search: 330311, 330310
• CPC Class Codes: G05F 1/56 using semiconductor devices in series with the load as final control devices G05F1/461 takes precedence
• CPC Class Codes: H03F 1/0222 by using a signal derived from the input signal
• CPC Class Codes: H03F 1/0266 by using a signal derived from the input signal
• CPC Class Codes: H03F 1/223 with MOSFET's
• CPC Class Codes: H03F 2200/18 the bias of the gate of a FET being controlled by a control signal
• CPC Class Codes: H03F 2200/375 Circuitry to compensate the offset being present in an amplifier
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/555 A voltage generating circuit being realised for biasing different circuit elements
• CPC Class Codes: H03F 2200/61 the cascode amplifier has more than one common gate stage
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/21 with semiconductor devices only H03F3/245 takes precedence
• CPC Class Codes: H03F 3/245 with semiconductor devices only
• CPC Class Codes: H03G 1/0023 in emitter-coupled or cascode amplifiers H03G1/0029 takes precedence
• CPC Class Codes: H03G 1/0029 using FETs
• CPC Class Codes: H03G 1/007 using FET type devices

Abstract

Systems, methods and apparatus for efficient power control of an RF amplifier for amplification of a constant envelope RF signal are described. A reduction in a size of a pass device of an LDO regulator is obtained by removing the pass device of the LDO regulator from a main current conduction path of the RF amplifier. Power control is provided by varying one or more gate voltages to cascoded transistors of a transistor stack of the RF amplifier according to a power control voltage. Various configurations for controlling the gate voltages are presented by way of a smaller size LDO regulator or by completely removing the LDO regulator. In a case where a supply voltage to the transistor stack varies, such as in a case of a battery, a compensation circuit is used to adjust the power control voltage in view of a variation of the supply voltage, and therefore null a corresponding drift in output power of the RF amplifier.

Claims

1. A method for controlling an output power of an amplifier arrangement, the method comprising:

providing a stack of a plurality of transistors arranged in a cascode configuration, comprising an input transistor and one or more cascoded transistors, the one or more cascoded transistors comprising an output transistor;

providing a gate voltage control module;

coupling voltage control nodes of the gate voltage control module to gates of the one or more transistors of the stack;

supplying a supply voltage across the stack;

based on the coupling, providing gate voltages to the one or more cascoded transistors;

inputting a constant envelope radio frequency (RF) signal to the input transistor;

based on the inputting, obtaining an amplified RF signal at the output transistor;

varying, independently from the supply voltage, at least one gate voltage of the gate voltages to the one or more cascoded transistors; and

based on the varying, controlling the output power of the amplified RF signal,

wherein a voltage control node of coupled voltage control nodes of the gate voltage control module is configured to provide the at least one gate voltage, and

wherein a control voltage to the gate voltage control module varies the at least one gate voltage for controlling of the output power of the amplified RF signal.

2. The method according to claim 1, further comprising:

based on the varying, varying a transconductance of the stack.

3. The method according to claim 1, further comprising:

based on the varying, varying an ON resistance of a transistor of the one or more cascoded transistors.

4. The method according to claim 1, further comprising:

based on the varying, changing a region of operation of a transistor of the one or more cascoded transistors from a saturation region of operation to a triode region of operation, or vice versa.

5. The method according to claim 1, further comprising:

coupling gate capacitors to gates of the one or more cascoded transistors; and

based on the coupling, providing a substantial equal division of the amplified RF signal across the plurality of the transistors of the stack.

6. The method according to claim 1, wherein the supply voltage is a varying supply voltage, the method further comprising:

determining a voltage level of the supply voltage;

based on the determining, further varying the at least one gate voltage; and

based on the further varying, maintaining the output power of the amplified RF signal.

7. The method according to claim 1, wherein the controlling of the output power of the amplified RF signal provides a dynamic range of the output power greater than 50 dB.

8. The method according to claim 1, wherein the gate voltage control module is further configured to provide fixed voltages to remaining gate voltages of the one or more transistors of the cascoded transistors of the stack.

9. The method according to claim 8, wherein the gate voltage control module further comprises a configuration control module configured to control association of the at least one gate voltage and the fixed voltages to the gates of the one or more transistors of the stack based on configuration control data.

10. The method according to claim 9, wherein the configuration control module comprises a lookup table adapted to store the configuration control data.

11. The method according to claim 10, wherein the configuration control data are in correspondence of one or more performance profiles of the circuital arrangement.

12. The method according to claim 11, wherein the one or more performance profiles comprises:

a) a linearity performance, and b) a dynamic range performance.

13. A method for controlling an output power of an amplifier arrangement, the method comprising:

providing a stack of a plurality of transistors arranged in a cascode configuration, comprising an input transistor and one or more cascoded transistors, the one or more cascoded transistors comprising an output transistor;

providing a gate voltage control module;

coupling voltage control nodes of the gate voltage control module to gates of the one or more transistors of the stack;

supplying a varying supply voltage across the stack;

based on the coupling, providing gate voltages to the one or more cascoded transistors;

inputting a constant envelope radio frequency (RF) signal to the input transistor;

based on the inputting, obtaining an amplified RF signal at the output transistor;

varying at least one gate voltage of the gate voltages to the one or more cascoded transistors;

based on the varying, controlling the output power of the amplified RF signal,

determining a voltage level of the supply voltage;

based on the determining, further varying the at least one gate voltage; and

based on the further varying, maintaining the output power of the amplified RF signal

wherein a voltage control node of coupled voltage control nodes of the gate voltage control module is configured to provide the at least one gate voltage,

wherein a control voltage to the gate voltage control module varies the at least one gate voltage for controlling of the output power of the amplified RF signal.