Deposition of metal borides
First Claim
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1. A method of forming a film having a metal boride comprising:
- providing a substrate for processing in a reaction chamber;
performing a metal precursor deposition onto the substrate, the performing the metal precursor deposition step comprises;
pulsing a metal precursor onto the substrate; and
purging an excess of the metal precursor from the reaction chamber; and
performing a decaborane precursor deposition onto the substrate, the performing the decaborane precursor deposition step comprises;
pulsing a decaborane precursor onto the substrate, wherein prior to entering into the reaction chamber, the decaborane precursor is kept at a temperature not exceeding 65°
C.; and
purging an excess of the decaborane precursor from the reaction chamber;
wherein the metal precursor comprises one of;
titanium tetrachloride (TiCl4), niobium pentachloride (NbCl5), tantalum pentafluoride (TaF5), and niobium pentafluoride (NbF5) and wherein prior to entering the reaction chamber, the metal halide is kept at temperature ranging between 50°
C. and 120°
C.;
wherein a reaction between the metal halide precursor and the decaborane precursor forms a film comprising at least one of;
titanium boride (TiB), tantalum boride (TaB), or niobium boride (NbB);
wherein the metal precursor deposition step is repeated a predetermined number of times; and
wherein the decaborane precursor deposition step is repeated a predetermined number of times.
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Abstract
A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.
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Citations
20 Claims
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1. A method of forming a film having a metal boride comprising:
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providing a substrate for processing in a reaction chamber; performing a metal precursor deposition onto the substrate, the performing the metal precursor deposition step comprises; pulsing a metal precursor onto the substrate; and purging an excess of the metal precursor from the reaction chamber; and performing a decaborane precursor deposition onto the substrate, the performing the decaborane precursor deposition step comprises; pulsing a decaborane precursor onto the substrate, wherein prior to entering into the reaction chamber, the decaborane precursor is kept at a temperature not exceeding 65°
C.; andpurging an excess of the decaborane precursor from the reaction chamber; wherein the metal precursor comprises one of;
titanium tetrachloride (TiCl4), niobium pentachloride (NbCl5), tantalum pentafluoride (TaF5), and niobium pentafluoride (NbF5) and wherein prior to entering the reaction chamber, the metal halide is kept at temperature ranging between 50°
C. and 120°
C.;wherein a reaction between the metal halide precursor and the decaborane precursor forms a film comprising at least one of;
titanium boride (TiB), tantalum boride (TaB), or niobium boride (NbB);wherein the metal precursor deposition step is repeated a predetermined number of times; and wherein the decaborane precursor deposition step is repeated a predetermined number of times. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a film having a metal boride comprising:
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providing a substrate for processing in a reaction chamber; exposing the substrate to a metal halide precursor, wherein prior to entering the reaction chamber, the metal halide is kept at temperature ranging between 50°
C. and 120°
C.;exposing the substrate with a purge gas after exposing the substrate to the metal halide precursor; exposing the substrate to a decaborane precursor, wherein prior to entering into the reaction chamber, the decaborane precursor is kept at a temperature not exceeding 65°
C.; andexposing the substrate with the purge gas after exposing the substrate to the decaborane precursor; wherein the metal halide precursor exposing step is repeated a predetermined number of times; and wherein the decaborane precursor exposing step is repeated a predetermined number of times. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification