Display device

• US 10,191,345 B2
• Filed: 04/11/2017
• Issued: 01/29/2019
• Est. Priority Date: 11/01/2016
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: InnoLux Corporation
• Inventors: Lius, Chandra, Lee, Kuan-Feng, Hsu, Nai-Fang
• Primary Examiner(s): Pham, Thanhha
• Application Number:
  US15/484,161
• Publication Number:
  US 20180120612A1
• Time in Patent Office: 658 Days
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/13624 having more than one switching element per pixel
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13685 Top gates
• CPC Class Codes: G02F 2202/104 poly-Si
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1237 with a different composition, shape, layout or thickness of the gate insulator in different devices
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A display device is disclosed, which includes: a first substrate; a first transistor disposed on the first substrate, wherein the first transistor comprises a first semiconductor layer; a second transistor disposed on the first substrate, wherein the second transistor includes a second semiconductor layer; and a first insulating layer disposed under the first semiconductor layer; wherein a thickness of the first insulating layer is greater than or equal to 200 nm and less than or equal to 500 nm; and wherein one of the first semiconductor layer and the second semiconductor layer comprises a silicon semiconductor layer, and the other comprises an oxide semiconductor layer.

Claims

1. A display device, comprising:

a first substrate comprising a display region and a peripheral region, wherein the peripheral region is adjacent to the display region;

a first transistor disposed on the peripheral region, wherein the first transistor comprises a first semiconductor layer;

a second transistor disposed on the display region, wherein the second transistor comprises a second semiconductor layer;

a first insulating layer disposed under the first semiconductor layer;

wherein a thickness of the first insulating layer is greater than or equal to 200 nm and less than or equal to 500 nm;

wherein the first semiconductor layer is a silicon semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer

a first buffer layer disposed on the first substrate, a second buffer layer disposed on the first buffer layer, a third buffer layer disposed on the second buffer layer, and a fourth buffer layer disposed on the third buffer layer and below the first insulating layer;

wherein the first buffer layer, the third buffer layer and the first insulating layer respectively comprise comprises silicon oxide, and the second buffer layer and the fourth buffer layer respectively comprises silicon nitride.

2. The display device of claim 1, wherein the thickness of the first insulating layer is greater than or equal to 250 nm and less than or equal to 400 nm.

3. The display device of claim 1, further comprising a second insulating layer on the first semiconductor layer, wherein the second insulating layer comprises silicon oxide and contacts the first semiconductor layer.

4. The display device of claim 3, wherein the thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

5. The display device of claim 3, wherein a thickness of the second insulating layer is greater than or equal to 100 nm and less than or equal to 200 nm.

6. The display device of claim 3, wherein a ratio is the thickness of the first insulating layer to a thickness of the second insulating layer, and the ratio is greater than or equal to 1 and less than or equal to 5.

7. The display device of claim 6, wherein the ratio is greater than or equal to 1.25 and less than or equal to 4.

8. The display device of claim 6, wherein the ratio is greater than or equal to 1.5 and less than or equal to 3.

9. The display device of claim 1, wherein the fourth buffer layer directly contacts the first insulting layer.

10. The display device of claim 1, wherein the first substrate is a plastic substrate.

11. The display device of claim 1, wherein the first buffer layer directly contacts the first substrate.

12. The display device of claim 1, wherein the second semiconductor layer is disposed above the first insulating layer.

13. The display device of claim 1, further comprising a second insulating layer on the first semiconductor layer, wherein the second insulating layer comprises silicon oxide and contacts the first semiconductor layer, and the second semiconductor layer is disposed on the second insulating layer.

14. The display device of claim 1, further comprising a third insulating layer and a fourth insulating layer, wherein the third insulating layer is disposed above the first semiconductor layer, the fourth insulating layer is disposed on the third insulating layer, the third insulating layer comprises silicon nitride, the fourth insulating layer comprises silicon oxide, and the second semiconductor layer is directly disposed on the fourth insulating layer.

15. The display device of claim 1, further comprising a light shielding layer disposed below the second semiconductor layer, wherein the light shielding layer comprises a silicon layer.