Self-aligned multiple patterning processes using bi-layer mandrels and cuts formed with block masks

• US 10,192,780 B1
• Filed: 05/29/2018
• Issued: 01/29/2019
• Est. Priority Date: 05/29/2018
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Wang, Xiaohan, Shu, Jiehui, O'Brien, Brendan, Spooner, Terry A., Liu, Jinping, Srivastava, Ravi Prakash
• Primary Examiner(s): Ullah, Elias M
• Application Number:
  US15/991,529
• Time in Patent Office: 245 Days
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry

Abstract

Methods of self-aligned double patterning and improved interconnect structures formed by self-aligned double patterning. A mandrel line including an upper layer and a lower layer is formed over a hardmask. A non-mandrel cut block is formed over a portion of a non-mandrel line, after which the upper layer of the mandrel line is removed. An etch mask is formed over a first section of the lower layer of the mandrel line defining a mandrel cut block over a first portion of the hardmask. The first section of the lower layer is arranged between adjacent second sections of the lower layer. The second sections of the lower layer of the mandrel line are removed to expose respective second portions of the hardmask, and the second portions of the hardmask are removed to form a trench. The mandrel cut block masks the first portion of the hardmask during the etching process.

Claims

1. A method comprising:

forming an upper layer and a lower layer of a mandrel line over a first hardmask;

forming a non-mandrel cut block over a portion of a non-mandrel line;

after forming the non-mandrel cut block, removing the upper layer of the mandrel line;

forming a first etch mask over a first section of the lower layer of the mandrel line that is arranged laterally between adjacent second sections of the lower layer and that defines a mandrel cut block over a first portion of the first hardmask;

after forming the first etch mask, removing the second sections of the lower layer of the mandrel line to expose respective second portions of the first hardmask; and

removing the second portions of the first hardmask with a first etching process to form a trench in the first hardmask,

wherein the first portion of the first hardmask is masked by the mandrel cut block during the first etching process.

2. The method of claim 1 wherein forming the mandrel line comprises:

forming a layer stack including a second hardmask over the first hardmask and a mandrel layer over the second hardmask;

etching the mandrel layer to form the upper layer of the mandrel line; and

etching the second hardmask to form the lower layer of the mandrel line.

3. The method of claim 2 wherein the first hardmask is comprised of a first material, the second hardmask is comprised of a second material that can be removed selective to the first material, and the mandrel layer is comprised of a third material that can be removed selective to the second material and the first material.

4. The method of claim 3 wherein the first material is titanium nitride, the second material is silicon nitride, and the third material is amorphous silicon.

5. The method of claim 1 wherein forming the first etch mask comprises:

forming an etch mask material layer over the first section and the second sections of the lower layer of the mandrel line;

masking a first portion of the etch mask material layer; and

removing a second portion of the etch mask material layer with a second etching process,

wherein the first portion of the etch mask material layer forms the first etch mask and overlaps with the first section of the lower layer of the mandrel line.

6. The method of claim 5 wherein the etch mask material layer is comprised of a polymer material.

7. The method of claim 1 wherein the mandrel line includes a plurality of sidewalls, and further comprising:

depositing a conformal layer over the mandrel line and the non-mandrel line; and

removing a first portion of the conformal layer from over the upper layer of the mandrel line and the non-mandrel line with a second etching process to form respective spacers on the sidewalls of the mandrel line.

8. The method of claim 7 wherein the spacers have a defined thickness, and the first etch mask has a dimension along a length of the mandrel line that is greater than twice the defined thickness of the spacers.

9. The method of claim 8 wherein the defined thickness of the spacers is less than or equal to 20 nm.

10. The method of claim 7 wherein forming the non-mandrel cut block comprises:

before removing the first portion of the conformal layer, forming a second etch mask over a second portion of the conformal layer overlying the non-mandrel line,

wherein the second etch mask protects the second portion of the conformal layer during the second etching process, and the second portion of the conformal layer forms the non-mandrel cut block.

11. The method of claim 10 further comprising:

removing the second etch mask to expose the non-mandrel cut block and a third portion of the conformal layer;

before removing the upper layer of the mandrel line, forming a gapfill material over the non-mandrel line and the non-mandrel cut block; and

,

removing, by a third etching process, the third portion of the conformal layer,

wherein the gapfill material protects the non-mandrel cut block from the third etching process.

12. The method of claim 11 wherein the gapfill material is composed of a polymer material.

13. The method of claim 12 wherein the first etch mask is composed of the polymer material, and the first etch mask and the gapfill material are concurrently removed before removing the second portions of the first hardmask.

14. The method of claim 11 wherein a fourth portion of the conformal layer is deposited over a buffer region, and the gapfill material is deposited over the fourth portion of the conformal layer disposed over the buffer region.

15. The method of claim 14 wherein the gapfill material protects the fourth portion of the conformal layer disposed over the buffer region during the second etching process and the third etching process.

16. A structure comprising:

a first metallization line, the first metallization line having a first outer sidewall, a second outer sidewall, a first section, a second section, and a cut in the first metallization line disposed between the first section and the second section; and

a second metallization line adjacent to the first metallization line, the second metallization line having a third outer sidewall adjacent to and parallel to the first outer sidewall,

wherein the cut spans a first distance between a first end of the first section and a second end of the second section, the first outer sidewall and the third outer sidewall are separated by a second distance, and the first distance is greater than two times the second distance.

17. The structure of claim 16 wherein the second distance separating the first outer sidewall and the third outer sidewall is less than or equal to 20 nm.

18. The structure of claim 16 wherein the first metallization line and the second metallization line are comprised of copper.

19. The structure of claim 16 further comprising:

a third metallization line adjacent to the first metallization line, the third metallization line having a fourth outer sidewall adjacent to the second outer sidewall,

wherein a third distance between the third outer sidewall and the fourth outer sidewall traversing the cut in the first metallization line is equal to a fourth distance between the third outer sidewall and the fourth outer sidewall traversing the first section of the first metallization line.

20. The structure of claim 19 wherein the first metallization line, the second metallization line, and the third metallization line each have a width of less than or equal to 20 nm.