Methods of fabricating dual threshold voltage devices
First Claim
1. A method of fabricating a cylindrical device, comprising:
- providing a cylindrical device having two transistors sharing a common silicide source; and
creating the silicide source, including;
depositing multiple layers in succession on an oxidized silicon substrate, the multiple layers including at least an oxide layer and a planarization layer;
removing, at least partially, the oxide layer and the planarization layer until the silicon substrate is exposed;
removing, at least partially, the oxide layer to expose a horizontal cross section of the cylindrical device to create an annular silicon substrate area; and
after the removing, depositing a siliciding metal on the annular area to form the silicide source.
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Accused Products
Abstract
A device having two transistors with dual thresholds, and a method of fabricating the device, including fabricating a silicide source, a conductive layer, and contacts to a plurality of layers of the device, is provided. The device has a core and a plurality of layers that surround the core in succession, including a first layer, a second layer, a third layer, and a fourth layer. The device further comprises a first input terminal coupled to the core, the first input terminal being configured to receive a first voltage and a second input terminal coupled to the fourth layer, the second input terminal being configured to receive a second voltage. The device comprises a common source terminal coupled to the core and the fourth layer. A memory device, such as an MTJ, may be coupled to the device.
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Citations
25 Claims
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1. A method of fabricating a cylindrical device, comprising:
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providing a cylindrical device having two transistors sharing a common silicide source; and creating the silicide source, including; depositing multiple layers in succession on an oxidized silicon substrate, the multiple layers including at least an oxide layer and a planarization layer; removing, at least partially, the oxide layer and the planarization layer until the silicon substrate is exposed; removing, at least partially, the oxide layer to expose a horizontal cross section of the cylindrical device to create an annular silicon substrate area; and after the removing, depositing a siliciding metal on the annular area to form the silicide source. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification