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Bonding process with inhibited oxide formation

  • US 10,192,850 B1
  • Filed: 09/19/2017
  • Issued: 01/29/2019
  • Est. Priority Date: 09/19/2016
  • Status: Active Grant
First Claim
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1. A method of forming a wafer-to-wafer bond, the method comprising:

  • forming, on a first wafer, a first contact from a first conductive material subject to surface oxidation when exposed to air;

    disposing a layer of oxide-inhibiting material over a bonding surface of the first contact;

    forming, on a second wafer, a second contact from a second conductive material that, upon heating while in physical contact with the first conductive material, will form a eutectic bond;

    positioning the first and second wafers relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material; and

    after positioning the first and second wafers relative to one another, heating the first and second contacts and the layer of oxide-inhibiting material to a first temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond;

    the method further comprising, prior to positioning the first and second wafers relative to one another such that the bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material, heating the first contact and the layer of oxide-inhibiting material to a second temperature that alloys the oxide-inhibiting material with the first conductive material.

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