Bonding process with inhibited oxide formation
First Claim
1. A method of forming a wafer-to-wafer bond, the method comprising:
- forming, on a first wafer, a first contact from a first conductive material subject to surface oxidation when exposed to air;
disposing a layer of oxide-inhibiting material over a bonding surface of the first contact;
forming, on a second wafer, a second contact from a second conductive material that, upon heating while in physical contact with the first conductive material, will form a eutectic bond;
positioning the first and second wafers relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material; and
after positioning the first and second wafers relative to one another, heating the first and second contacts and the layer of oxide-inhibiting material to a first temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond;
the method further comprising, prior to positioning the first and second wafers relative to one another such that the bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material, heating the first contact and the layer of oxide-inhibiting material to a second temperature that alloys the oxide-inhibiting material with the first conductive material.
1 Assignment
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Accused Products
Abstract
First and second contacts are formed on first and second wafers from disparate first and second conductive materials, at least one of which is subject to surface oxidation when exposed to air. A layer of oxide-inhibiting material is disposed over a bonding surface of the first contact and the first and second wafers are positioned relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material. Thereafter, the first and second contacts and the layer of oxide-inhibiting material are heated to a temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond.
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Citations
18 Claims
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1. A method of forming a wafer-to-wafer bond, the method comprising:
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forming, on a first wafer, a first contact from a first conductive material subject to surface oxidation when exposed to air; disposing a layer of oxide-inhibiting material over a bonding surface of the first contact; forming, on a second wafer, a second contact from a second conductive material that, upon heating while in physical contact with the first conductive material, will form a eutectic bond; positioning the first and second wafers relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material; and after positioning the first and second wafers relative to one another, heating the first and second contacts and the layer of oxide-inhibiting material to a first temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond; the method further comprising, prior to positioning the first and second wafers relative to one another such that the bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material, heating the first contact and the layer of oxide-inhibiting material to a second temperature that alloys the oxide-inhibiting material with the first conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a wafer-to-wafer bond, the method comprising:
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forming, on a first wafer, a first contact from a first conductive material subject to surface oxidation when exposed to air; disposing a layer of oxide-inhibiting material over a bonding surface of the first contact; forming, on a second wafer, a second contact from a second conductive material that, upon heating while in physical contact with the first conductive material, will form a eutectic bond; positioning the first and second wafers relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material; and after positioning the first and second wafers relative to one another, heating the first and second contacts and the layer of oxide-inhibiting material to a first temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond, the method further comprising; prior to positioning the first and second wafers relative to one another and prior to heating the first and second contacts and the layer of oxide-inhibiting material to the first temperature, disposing a layer of oxide-inhibiting material over a bonding surface of the second contact; and prior to positioning the first and second wafers relative to one another and after disposing the layer of oxide-inhibiting material over the bonding surface of the second contact, heating the first and second contacts and the respective layers of oxide-inhibiting material disposed over the bonding surfaces thereof to one or more temperatures that (i) alloy the first conductive material with the oxide-inhibiting material disposed over the bonding surface of the first contact and (ii) alloy the second conductive material with the oxide-inhibiting material disposed over the bonding surface of the second contact. - View Dependent Claims (15, 16, 17, 18)
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Specification