Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate;
a multiple layer lead structure formed over the semiconductor substrate; and
a coil formed in the multiple layer lead structure,wherein the coil comprises;
a first coiled lead formed in a first layer;
a second coiled lead formed in a second layer;
a third coiled lead formed in the first layer;
a first via connected to the first coiled lead and the second coiled lead; and
a second via connected to the second coiled lead and the third coiled lead,wherein each of the first coiled lead and the third coiled lead have one complete wind,wherein the second coiled lead has two winds,wherein the third coiled lead encircles the first coiled lead,wherein an inter-lead capacitance of the first coiled lead and the second coiled lead is larger than an inter-lead capacitance between the first coiled lead and the third coiled lead,wherein at least one of the first, second, and third coiled leads includes a plurality of slits which are discontinuous in a longitudinal direction of the at least one of the first, second, and third coiled leads, and the plurality of slits are formed in parallel at a plurality of corners and the plurality of slits run parallel along entire liner portions of the at least one of the first, second, and third coiled leads.
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Abstract
An inductor element is formed in a multiple layer lead structure including a lead, an insulative layer that insulates leads above and below, and a via provided in the insulative layer and connecting leads above and below wherein lead layers are multiply laminated layers, characterized in that: at least a portion of at least a pair of vertically adjacent leads are coiled leads; the coiled leads are connected in series, wherein current directions of vertically adjacent coiled leads are the same by a via provided on an end portion thereof, and form a serial inductance; and an inter-lead capacitance of the vertically adjacent coiled leads is larger than an inter-lead capacitance between other coiled leads formed in the same lead layer.
20 Citations
10 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; a multiple layer lead structure formed over the semiconductor substrate; and a coil formed in the multiple layer lead structure, wherein the coil comprises; a first coiled lead formed in a first layer; a second coiled lead formed in a second layer; a third coiled lead formed in the first layer; a first via connected to the first coiled lead and the second coiled lead; and a second via connected to the second coiled lead and the third coiled lead, wherein each of the first coiled lead and the third coiled lead have one complete wind, wherein the second coiled lead has two winds, wherein the third coiled lead encircles the first coiled lead, wherein an inter-lead capacitance of the first coiled lead and the second coiled lead is larger than an inter-lead capacitance between the first coiled lead and the third coiled lead, wherein at least one of the first, second, and third coiled leads includes a plurality of slits which are discontinuous in a longitudinal direction of the at least one of the first, second, and third coiled leads, and the plurality of slits are formed in parallel at a plurality of corners and the plurality of slits run parallel along entire liner portions of the at least one of the first, second, and third coiled leads. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification