Dual threshold voltage devices with stacked gates
First Claim
1. An annular device, comprising:
- a core composed of conductive material; and
a plurality of layers surrounding a sidewall of the core in succession, the plurality of layers comprising;
a first layer composed of dielectric material and surrounding a sidewall portion of the core,a second layer composed of semiconductor material and surrounding a sidewall portion of the first layer,a third layer composed of dielectric material and surrounding a sidewall portion of the second layer, anda fourth layer composed of conductive material and surrounding a sidewall portion of the third layer;
wherein;
the core, the first layer, and the second layer correspond to a first transistor including a first input terminal; and
the second layer, the third layer, and the fourth layer correspond to a second transistor including a second input terminal;
the second layer is a common channel;
the first input terminal is coupled to the core, the first input terminal being configured to receive a first voltage for the first transistor;
the second input terminal is coupled to the fourth layer, the second input terminal being configured to receive a second voltage for the second transistor; and
the first input terminal and the second input terminal extend radially outward from the annular device, and wherein the first input terminal is aligned with the second input terminal.
4 Assignments
0 Petitions
Accused Products
Abstract
A device having two transistors with dual thresholds, and a method of fabricating the device, including fabricating a silicide source, a conductive layer, and contacts to a plurality of layers of the device, is provided. The device has a core and a plurality of layers that surround the core in succession, including a first layer, a second layer, a third layer, and a fourth layer. The device further comprises a first input terminal coupled to the core, the first input terminal being configured to receive a first voltage and a second input terminal coupled to the fourth layer, the second input terminal being configured to receive a second voltage. The device comprises a common source terminal coupled to the core and the fourth layer. A memory device, such as an MTJ, may be coupled to the device.
15 Citations
12 Claims
-
1. An annular device, comprising:
-
a core composed of conductive material; and a plurality of layers surrounding a sidewall of the core in succession, the plurality of layers comprising; a first layer composed of dielectric material and surrounding a sidewall portion of the core, a second layer composed of semiconductor material and surrounding a sidewall portion of the first layer, a third layer composed of dielectric material and surrounding a sidewall portion of the second layer, and a fourth layer composed of conductive material and surrounding a sidewall portion of the third layer; wherein; the core, the first layer, and the second layer correspond to a first transistor including a first input terminal; and the second layer, the third layer, and the fourth layer correspond to a second transistor including a second input terminal; the second layer is a common channel; the first input terminal is coupled to the core, the first input terminal being configured to receive a first voltage for the first transistor; the second input terminal is coupled to the fourth layer, the second input terminal being configured to receive a second voltage for the second transistor; and the first input terminal and the second input terminal extend radially outward from the annular device, and wherein the first input terminal is aligned with the second input terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
Specification