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Dual threshold voltage devices with stacked gates

  • US 10,192,984 B1
  • Filed: 01/08/2018
  • Issued: 01/29/2019
  • Est. Priority Date: 01/08/2018
  • Status: Active Grant
First Claim
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1. An annular device, comprising:

  • a core composed of conductive material; and

    a plurality of layers surrounding a sidewall of the core in succession, the plurality of layers comprising;

    a first layer composed of dielectric material and surrounding a sidewall portion of the core,a second layer composed of semiconductor material and surrounding a sidewall portion of the first layer,a third layer composed of dielectric material and surrounding a sidewall portion of the second layer, anda fourth layer composed of conductive material and surrounding a sidewall portion of the third layer;

    wherein;

    the core, the first layer, and the second layer correspond to a first transistor including a first input terminal; and

    the second layer, the third layer, and the fourth layer correspond to a second transistor including a second input terminal;

    the second layer is a common channel;

    the first input terminal is coupled to the core, the first input terminal being configured to receive a first voltage for the first transistor;

    the second input terminal is coupled to the fourth layer, the second input terminal being configured to receive a second voltage for the second transistor; and

    the first input terminal and the second input terminal extend radially outward from the annular device, and wherein the first input terminal is aligned with the second input terminal.

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