Light emitting diode

• US 10,193,017 B2
• Filed: 02/26/2018
• Issued: 01/29/2019
• Est. Priority Date: 03/27/2015
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Mae Yi, Lee, Jin Woong, Yoon, Yeo Jin, Lee, Seom Geun, Ryu, Yong Woo, Lee, Keum Ju
• Primary Examiner(s): Malek, Maliheh
• Application Number:
  US15/905,224
• Publication Number:
  US 20180190864A1
• Time in Patent Office: 337 Days
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode includes a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Claims

1. A light emitting device comprising:

a substrate including a first to fourth corners, the first corner and the second corner disposed in a direction along an edge of the substrate and the third corner and the forth corner disposed in the direction along another edge of the substrate opposite to the edge of the substrate;

a first to third light emitting cells that are disposed on the substrate and sequentially arranged along the direction, each light emitting cell including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a first electrode pad disposed in the first light emitting cell and electrically connected to the first conductivity type semiconductor layer of the first light emitting cell, the first electrode pad located closer to the first corner than the second to fourth corners;

a second electrode pad disposed in the third light emitting cell and electrically connected to the second conductivity type semiconductor layer of the third light emitting cell, the second electrode pad located closer to the third corner than the first, second and fourth corners;

a first connector connecting the first light emitting cell to the second light emitting cell and disposed closer to the fourth corner than the first, the second and the third corners;

a second connector connecting the second light emitting cell to the third light emitting cell and disposed closer to the second corner than the first, the third and the fourth corners; and

an insulation layer formed above the substrate and under the second connector,

wherein a surface of the second connector and a surface of the insulation layer include a pattern corresponding to a shape of an upper surface of the substrate,

wherein the second light emitting cell includes a second extension and a third extension that are electrically connected to the second conductivity type semiconductor layer of the second light emitting cell,

wherein the insulation layer comprises a first portion under the second connector and second portion under the second and the third extension, and

wherein a width of the first portion is wider than a width of the second portion and the third extension.

2. The light emitting device of claim 1, wherein the first electrode pad and the second electrode pad are arranged in a diagonal direction.

3. The light emitting device of claim 1, wherein the first connector and the second connector are arranged in a diagonal direction.

4. The light emitting device of claim 1, wherein the first light emitting cell further includes a first extension extending from the first electrode pad, and a second extension and a third extension that are disposed on opposite sides of the first extension.

5. The light emitting device of claim 4, wherein the first connector connects the second and third extensions of the first light emitting cell to the second light emitting cell.

6. The light emitting device of claim 4, wherein the first electrode pad is disposed closer to a longitudinal central axis of the first light emitting cell than an imaginary line connecting ends of the second extension and the third extension.

7. The light emitting device of claim 1, wherein the third light emitting cell further includes a second extension and a third extension that extend from the second electrode pad and a first extension disposed between the second extension and the third extension.

8. The light emitting device of claim 7, wherein the second connector connects the first extension of the third light emitting cell to the second light emitting cell.

9. The light emitting device of claim 1, wherein the second light emitting cell further includes a first extension disposed on the first conductivity type semiconductor layer of the second light emitting cell and between the second extension and the third extension.

10. The light emitting device of claim 1, wherein the insulation layer includes a distributed Bragg reflector structure.

11. A light emitting device comprising:

a first light emitting cell including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, an active layer interposed between the first and second conductive type semiconductor layers, and a first electrode pad electrically connected to the first conductivity type semiconductor layer of the first light emitting cell;

a second light emitting cell disposed adjacent to the first light emitting cell and including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer of the second light emitting cell, and an active layer interposed between the first and second conductive type semiconductor layers of the second light emitting cell;

a third light emitting cell disposed adjacent to the second light emitting cell and including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer of the third light emitting cell, an active layer interposed between the first and second conductive type semiconductor layers of the third light emitting cell, and a second electrode pad electrically connected to the second conductivity type semiconductor layer of the third light emitting cell, wherein the second electrode pad and the first electrode pad are arranged in a first diagonal direction;

a first connector connecting the first light emitting cell to the second light emitting cell; and

a second connector connecting the second light emitting cell to the third light emitting cell, wherein the first connector and the second connector are disposed in a second diagonal direction different from the first diagonal direction; and

a first insulation layer formed above the substrate and under the second connector, and

wherein a surface of the second connector and a surface of the insulation layer include a pattern;

wherein the light emitting device further includes a second insulation layer covering side surfaces of the active layer and the second conductive type semiconductor layer located around the first electrode pad.

12. The light emitting device of claim 11, wherein the first electrode pad is disposed closer to a first corner of the first light emitting cell than other corners of the first light emitting cell.

13. The light emitting device of claim 12, wherein the first connector is disposed closer to a second corner of the first light emitting cell than other corners of the first light emitting cell, the second corner and the first corner positioned diagonally opposite to each other.

14. The light emitting device of claim 11, wherein the second electrode pad is disposed closer to a first corner of the third light emitting cell than other corners of the third light emitting cell.

15. The light emitting device of claim 14, wherein the second connector is disposed closer to a second corner of the third light emitting cell than other corners of the third light emitting cell, the second corner and the first corner positioned diagonally opposite to each other.

16. The light emitting device of claim 11, the first light emitting cell further includes a first extension extending from the first electrode pad, and a second extension and a third extension disposed on opposite sides of the first extension.

17. The light emitting device of claim 16, wherein the first connector connects the second and the third extensions of the first light emitting cell to the second light emitting cell.

18. The light emitting device of claim 16, wherein the first electrode pad is disposed closer to a longitudinal central axis of the first light emitting cell than an imaginary line connecting ends of the second extension and the third extension.

19. The light emitting device of claim 11, wherein the third light emitting cell further includes a second extension and a third extension that extend from the second electrode pad and a first extension disposed between the second extension and the third extension.

20. The light emitting device of claim 19, wherein the second connector connects the first extension of the third light emitting cell to the second light emitting cell.

21. The light emitting device of claim 11, wherein the second light emitting cell further includes a second extension and a third extension that are electrically connected to the second conductivity type semiconductor layer of the second light emitting cell and a first extension disposed between the second extension and the third extension.