Light emitting diode chip
First Claim
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1. A light emitting diode chip comprising:
- a substrate comprising;
a plurality of recesses; and
a plurality of protrusions connected between the plurality of the recesses; and
a light emitting diode element layer disposed on the plurality of the recesses and the plurality of the protrusions,wherein a surface roughness of a surface of one of the plurality of the protrusions does not exceed 10 nanometers.
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Abstract
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, such that A1 and A2 satisfy the relation of 0.1≤A2/(A1+A2)≤0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.
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Citations
23 Claims
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1. A light emitting diode chip comprising:
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a substrate comprising; a plurality of recesses; and a plurality of protrusions connected between the plurality of the recesses; and a light emitting diode element layer disposed on the plurality of the recesses and the plurality of the protrusions, wherein a surface roughness of a surface of one of the plurality of the protrusions does not exceed 10 nanometers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light emitting diode chip comprising:
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a substrate comprising; a plurality of recesses; and a plurality of protrusions connected between the plurality of the recesses; a buffer layer disposed on the plurality of the recesses and the plurality of the protrusions; and a light emitting layer disposed on the buffer layer; wherein a surface roughness of a surface of one of the plurality of the recesses does not exceed 10 nanometers. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification