Magnetoresistive memory device and manufacturing method of the same
First Claim
1. A magnetoresistive memory device comprising:
- a first magnetic layer;
a second magnetic layer provided on one major surface side of the first magnetic layer via a first nonmagnetic layer;
a third magnetic layer provided on a surface side the second magnetic layer which is opposite from the first magnetic layer, via a first Ru layer;
a sidewall insulating film provided on sides of the first to third magnetic layers;
a fourth magnetic layer provided on another major surface side of the first magnetic layer via a second nonmagnetic layer, a side surface of the fourth magnetic layer being located on an outer side with respect to a side surface of the first magnetic layer; and
a fifth magnetic layer provided on a surface side of the fourth magnetic layer which is opposite from the first magnetic layer, via a second Ru layer;
wherein;
the second and fourth magnetic layers comprise a material of a same kind, and the third and fifth magnetic layers comprise a material of a same kind,the second magnetic layer is thinner than the third and fourth magnetic layers, andthe fifth magnetic layer is thinner than the third and fourth magnetic layers.
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Abstract
According to one embodiment, a magnetoresistive memory device includes a first magnetic layer, a second magnetic layer on one major surface side of the first magnetic layer via a first nonmagnetic layer, a third magnetic layer on the second magnetic layer via a first Ru layer, a sidewall insulating film on sides of the layers, a fourth magnetic layer on an other major surface side of the first magnetic layer via a second nonmagnetic layer, and a fifth magnetic layer on the fourth magnetic layer via a second Ru layer. The reversed magnetic field of the second magnetic layer is smaller than that of the third and fourth magnetic layers, and the reversed magnetic field of the fifth magnetic layer is smaller than that of the third and fourth magnetic layers.
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Citations
8 Claims
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1. A magnetoresistive memory device comprising:
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a first magnetic layer; a second magnetic layer provided on one major surface side of the first magnetic layer via a first nonmagnetic layer; a third magnetic layer provided on a surface side the second magnetic layer which is opposite from the first magnetic layer, via a first Ru layer; a sidewall insulating film provided on sides of the first to third magnetic layers; a fourth magnetic layer provided on another major surface side of the first magnetic layer via a second nonmagnetic layer, a side surface of the fourth magnetic layer being located on an outer side with respect to a side surface of the first magnetic layer; and a fifth magnetic layer provided on a surface side of the fourth magnetic layer which is opposite from the first magnetic layer, via a second Ru layer; wherein; the second and fourth magnetic layers comprise a material of a same kind, and the third and fifth magnetic layers comprise a material of a same kind, the second magnetic layer is thinner than the third and fourth magnetic layers, and the fifth magnetic layer is thinner than the third and fourth magnetic layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification