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Magnetoresistive memory device and manufacturing method of the same

  • US 10,193,058 B2
  • Filed: 09/09/2016
  • Issued: 01/29/2019
  • Est. Priority Date: 03/14/2016
  • Status: Active Grant
First Claim
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1. A magnetoresistive memory device comprising:

  • a first magnetic layer;

    a second magnetic layer provided on one major surface side of the first magnetic layer via a first nonmagnetic layer;

    a third magnetic layer provided on a surface side the second magnetic layer which is opposite from the first magnetic layer, via a first Ru layer;

    a sidewall insulating film provided on sides of the first to third magnetic layers;

    a fourth magnetic layer provided on another major surface side of the first magnetic layer via a second nonmagnetic layer, a side surface of the fourth magnetic layer being located on an outer side with respect to a side surface of the first magnetic layer; and

    a fifth magnetic layer provided on a surface side of the fourth magnetic layer which is opposite from the first magnetic layer, via a second Ru layer;

    wherein;

    the second and fourth magnetic layers comprise a material of a same kind, and the third and fifth magnetic layers comprise a material of a same kind,the second magnetic layer is thinner than the third and fourth magnetic layers, andthe fifth magnetic layer is thinner than the third and fourth magnetic layers.

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