Low-loss and fast acting solid-state breaker
First Claim
1. A circuit for isolating a load from a source, the circuit comprising:
- at least one insulated-gate bipolar transistor (IGBT); and
at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor,wherein when no fault condition exists, the at least one GTO is configured to be on to couple the load to the source, andwherein when a fault condition exists;
the at least one IGBT is configured to turn on; and
the at least one GTO is configured to turn off after the at least one IGBT turns on.
3 Assignments
0 Petitions
Accused Products
Abstract
A circuit including a source, a load, and an isolation circuit for controllably isolating the load from the source. The isolation circuit is disposed between the source and the load. The isolation circuit includes at least one insulated-gate bipolar transistor (IGBT) and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor. When no fault condition exists, the GTO is configured to be on to couple the load to the source. When a fault condition exists, the at least one IGBT is configured to turn on. After the at least one IGBT turns on, the at least one GTO is configured to turn off. After a predetermined amount of time after the at least one GTO turns off, the at least one IGBT is configured to turn off.
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Citations
17 Claims
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1. A circuit for isolating a load from a source, the circuit comprising:
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at least one insulated-gate bipolar transistor (IGBT); and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor, wherein when no fault condition exists, the at least one GTO is configured to be on to couple the load to the source, and wherein when a fault condition exists; the at least one IGBT is configured to turn on; and the at least one GTO is configured to turn off after the at least one IGBT turns on. - View Dependent Claims (2, 3, 4)
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5. A circuit comprising:
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a source; a load; and an isolation circuit disposed between the source and the load, the isolation circuit comprising; at least one insulated-gate bipolar transistor (IGBT); and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor, wherein when no fault condition exists the at least one GTO is configured to be on to couple the load to the source, and wherein when a fault condition exists; the at least one IGBT is configured to turn on; and the at least one GTO is configured to turn off after the at least one IGBT turns on. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 17)
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13. A circuit comprising:
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a source; a load; and an isolation circuit disposed between the source and the load, the isolation circuit comprising; at least one insulated-gate bipolar transistor (IGBT); and at least one gate turn-off thyristor (GTO) in parallel with the insulated-gate bipolar transistor, wherein; the at least one IGBT comprises a collector, a gate, and an emitter, and the at least one GTO comprises an anode, a gate, and a cathode, wherein; the collector of the at least one IGBT is connected to the anode of the at least one GTO, the emitter of the at least one IGBT is connected to the cathode of the at least one GTO, and a controller connected to the gate of the at least one IGBT and to the gate of the at least one GTO is configured when no fault condition exists to supply a signal to the gate of the at least one GTO and when a fault conditions exists to; supply a signal to the gate of the at least one IGBT to turn on the at least one IGBT; and remove the signal from the gate of the at least one GTO to turn off the at least one GTO after turning on the IGBT. - View Dependent Claims (14, 15, 16)
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Specification