Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide

• US 10,199,212 B2
• Filed: 05/09/2018
• Issued: 02/05/2019
• Est. Priority Date: 03/10/2017
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Smith, David Charles, Hausmann, Dennis M.
• Primary Examiner(s): Chin, Edward
• Application Number:
  US15/975,554
• Publication Number:
  US 20180261448A1
• Time in Patent Office: 272 Days
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/45534 Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02312 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/32 using masks

Abstract

Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. Exposure to the acyl chloride is performed prior to deposition of the desired silicon-containing dielectric material or metal-containing dielectric material.

Claims

1. A method for selectively depositing a silicon-containing dielectric material on an exposed first surface of a substrate, the method comprising:

providing the substrate having the exposed first surface, and an exposed second surface;

exposing the substrate to an acyl chloride that reacts with the exposed second surface to selectively form blocking groups on the exposed second surface relative to the exposed first surface, the acyl chloride having a chemical structure of

2. The method of claim 1, wherein the silicon-containing dielectric material is silicon nitride.

3. The method of claim 2, wherein the second reactant selected from the group consisting of ammonia and hydrazines having the chemical structure

4. The method of claim 2, wherein the silicon-containing precursor is selected from the group consisting of silicon halides and aminosilanes.

5. The method of claim 1, wherein the silicon-containing dielectric material is silicon oxide.

6. The method of claim 5, wherein the second reactant is a weak oxidant.

7. The method of claim 5, wherein the second reactant is selected from the group consisting of water, hydrogen peroxide, and ozone.

8. The method of claim 1, wherein the acyl chloride is acetyl chloride.

9. The method of claim 1, further comprising, prior to providing the substrate, depositing silicon nitride to form an untreated silicon nitride surface;

and exposing the untreated silicon nitride surface to a mixture of ammonia and hydrogen gas and igniting a plasma for a duration between about 1 second and about 10 seconds to form the exposed second surface comprising primary amine groups.

10. The method of claim 9, wherein amount of ammonia in the mixture of ammonia and hydrogen is less than about 1% by volume.

11. The method of claim 1, further comprising, prior to providing the substrate, depositing silicon nitride to form an untreated silicon nitride surface and exposing the untreated silicon nitride surface to a mixture of nitrogen and hydrogen gas and igniting a plasma for a duration between about 1 second and about 10 seconds to form the exposed second surface comprising primary amine groups.

12. The method of claim 11, wherein amount of nitrogen in the mixture of nitrogen and hydrogen is less than about 1% by volume.

13. The method of claim 1, wherein the exposed second surface comprises surface terminated primary amine groups of silicon nitride deposited by chemical vapor deposition at a deposition temperature greater than about 500°

C.

14. A method for selectively depositing a metal-containing dielectric material on an exposed first surface of a substrate, the method comprising:

providing the substrate having the exposed first surface, and an exposed second surface;

exposing the substrate to an acyl chloride that reacts with the exposed second surface to selectively form blocking groups on the exposed second surface relative to the exposed first surface, the acyl chloride having a chemical structure of

15. The method of claim 14, wherein the metal-containing dielectric material is selected from the group consisting of zirconium oxide, titanium oxide, tin oxide, hafnium oxide, and titanium nitride.

16. The method of claim 14, wherein the acyl chloride is acetyl chloride.

17. The method of claim 14, further comprising, prior to providing the substrate, depositing silicon nitride to form an untreated silicon nitride surface;

and exposing the untreated silicon nitride surface to a gas and igniting a plasma for a duration between about 1 second and about 10 seconds to form the exposed second surface comprising primary amine groups.

18. The method of claim 17, wherein the gas is selected from the group consisting of ammonia, nitrogen, hydrogen, and combinations thereof.

19. The method of claim 14, wherein the exposed second surface comprises surface terminated primary amine groups of silicon nitride deposited by chemical vapor deposition at a deposition temperature greater than about 500°

C.

20. The method of claim 14, wherein the exposed first surface comprises a material selected from the group consisting of polysilicon, amorphous silicon, metals, and silicon nitride having single secondary amine terminated groups, and the exposed second surface comprises a silicon-containing material having a surface terminated group selected from the group consisting of hydroxyl and primary amine.