×

Apparatus and method for selective deposition

  • US 10,199,215 B2
  • Filed: 08/23/2017
  • Issued: 02/05/2019
  • Est. Priority Date: 09/22/2015
  • Status: Active Grant
First Claim
Patent Images

1. A substrate processing apparatus, comprising:

  • a platform;

    a transfer chamber centrally disposed on the platform, wherein at least one robot is disposed within the transfer chamber;

    a pre-clean chamber disposed on the platform adjacent the transfer chamber;

    an epitaxial deposition chamber disposed on the platform adjacent the transfer chamber;

    a surface passivation chamber disposed on the platform adjacent the transfer chamber, the surface passivation chamber having a pedestal disposed therein, the pedestal including a resistive heater;

    an atomic layer deposition chamber disposed on the platform adjacent the transfer chamber; and

    a microprocessor controller programmed to;

    perform, in the pre-clean chamber, a pre-clean process on a substrate disposed in the pre-clean chamber;

    transfer, via the at least one robot, without breaking vacuum, the substrate from the pre-clean chamber to the epitaxial deposition chamber;

    perform, in the epitaxial deposition chamber, an epitaxial deposition process to deposit source/drain materials on the substrate;

    transfer, via the at least one robot, without breaking vacuum, the substrate from the epitaxial deposition chamber to the surface passivation chamber;

    perform, in the surface passivation chamber, a surface passivation process to deposit an alkyl silyl material on dielectric materials disposed on the substrate;

    transfer, via the at least one robot, without breaking vacuum, the substrate from the surface passivation chamber to the atomic layer deposition chamber; and

    perform, in the atomic layer deposition chamber, a deposition operation to form a capping layer on the source/drain materials.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×