Apparatus and method for selective deposition

• US 10,199,215 B2
• Filed: 08/23/2017
• Issued: 02/05/2019
• Est. Priority Date: 09/22/2015
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Dube, Abhishek, Chu, Schubert S., Kachian, Jessica S., Thompson, David, Anthis, Jeffrey
• Primary Examiner(s): Lund, Jeffrie R
• Application Number:
  US15/684,827
• Publication Number:
  US 20170352531A1
• Time in Patent Office: 531 Days
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32899 Multiple chambers, e.g. cluster tools
• CPC Class Codes: H01L 21/02049 with gaseous HF
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02172 the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides materials containing silicon H01L21/02123; metal silicates H01L21/02142
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/283 Deposition of conductive or insulating materials for electrodes conducting electric current
• CPC Class Codes: H01L 21/306 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/31
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/32 using masks
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/67745 : characterized by movements or sequence of movements of transfer devices
• CPC Class Codes: H01L 29/66795 : with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

Claims

1. A substrate processing apparatus, comprising:

a platform;

a transfer chamber centrally disposed on the platform, wherein at least one robot is disposed within the transfer chamber;

a pre-clean chamber disposed on the platform adjacent the transfer chamber;

an epitaxial deposition chamber disposed on the platform adjacent the transfer chamber;

a surface passivation chamber disposed on the platform adjacent the transfer chamber, the surface passivation chamber having a pedestal disposed therein, the pedestal including a resistive heater;

an atomic layer deposition chamber disposed on the platform adjacent the transfer chamber; and

a microprocessor controller programmed to;

perform, in the pre-clean chamber, a pre-clean process on a substrate disposed in the pre-clean chamber;

transfer, via the at least one robot, without breaking vacuum, the substrate from the pre-clean chamber to the epitaxial deposition chamber;

perform, in the epitaxial deposition chamber, an epitaxial deposition process to deposit source/drain materials on the substrate;

transfer, via the at least one robot, without breaking vacuum, the substrate from the epitaxial deposition chamber to the surface passivation chamber;

perform, in the surface passivation chamber, a surface passivation process to deposit an alkyl silyl material on dielectric materials disposed on the substrate;

transfer, via the at least one robot, without breaking vacuum, the substrate from the surface passivation chamber to the atomic layer deposition chamber; and

perform, in the atomic layer deposition chamber, a deposition operation to form a capping layer on the source/drain materials.

2. The apparatus of claim 1, wherein the transfer chamber, the pre-clean chamber, the epitaxial deposition chamber, the surface passivation chamber, and the atomic layer deposition chamber are maintained at sub-atmospheric pressure.

3. The apparatus of claim 1, wherein the surface passivation chamber further comprises:

a chamber body defining a process volume; and

a showerhead disposed in the process volume opposite the pedestal, wherein the showerhead has apertures formed therein for delivering a chlorosilane material or a silylamine material to the process volume.

4. The apparatus of claim 3, wherein the chlorosilane material is dichlorodimethylsilane.

5. The apparatus of claim 3, wherein the silylamine material is selected from the group consisting of 1-(trimethylsilyl)pyrrolidine, aminosilane, diaminosilane, and combinations thereof.

6. The apparatus of claim 1, wherein the surface passivation chamber further comprises:

a heater disposed within sidewalls of the chamber body.

7. The apparatus of claim 6, wherein the resistive heater disposed in the pedestal, the heater disposed within sidewalls of the chamber body, or a combination thereof is operable to maintain the process volume at a temperature of between about 20°

C. and about 500°

C.

8. The apparatus of claim 1, wherein the surface passivation chamber further comprises:

a chamber body defining a process volume; and

a showerhead disposed in the process volume opposite the pedestal, the showerhead coupled to an RF power source, wherein the microprocessor controller is further programmed to deliver hydrogen ions and/or radicals to the process volume via a plurality of apertures in the showerhead.

9. The apparatus of claim 1, wherein the pre-clean chamber comprises:

a chamber body defining a process region;

a support assembly disposed within the process region; and

a lid assembly disposed opposite the support assembly, wherein the lid assembly defines one or more remote plasma regions therein.

10. The apparatus of claim 9, wherein the lid assembly further comprises:

a gas delivery plate disposed adjacent the process region;

a top plate comprising an electrode disposed opposite the gas delivery plate; and

a blocker assembly comprising a plurality of blocker plates disposed between the gas delivery plate and the top plate.

11. The apparatus of claim 10, wherein a first remote plasma region of the one or more remote plasma regions is defined between the top plate and a first blocker plate of the blocker assembly.

12. The apparatus of claim 11, wherein a second remote plasma region of the one or more remote plasma regions is defined between the first blocker plate and a second blocker plate of the blocker assembly.

13. The apparatus of claim 12, wherein a third remote plasma region of the one or more remote plasma regions is defined between the second blocker plate and the gas delivery plate.