Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas
First Claim
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1. A method for processing a semiconductor wafer, comprising at least the following acts:
- patterning a tip-to-side short-configured test area on the wafer;
patterning a first non-contact electrical measurement (NCEM) pad on the wafer;
patterning one or more connections to (i) electrically connect a first portion of the tip-to-side short-configured test area to the first NCEM pad and (ii) electrically connect a second portion of the tip-to-side short-configured test area to a permanent or virtual ground;
patterning a chamfer short-configured test area on the wafer;
patterning a second NCEM pad on the wafer;
patterning one or more connections to (i) electrically connect a first portion of the chamfer short-configured test area to the second NCEM pad and (ii) electrically connect a second portion of the chamfer short-configured test area to a permanent or virtual ground;
patterning a corner short-configured test area on the wafer;
patterning a third NCEM pad on the wafer;
patterning one or more connections to (i) electrically connect a first portion of the corner short-configured test area to the third NCEM pad and (ii) electrically connect a second portion of the corner short-configured test area to a permanent or virtual ground;
obtaining one or more first inline non-contact electrical measurements (inline NCEMs) from the first NCEM pad, where each first inline NCEM provides a measurement indicative of a short or leakage in the tip-to-side short-configured test area;
obtaining one or more second inline NCEMs from the second NCEM pad, where each second inline NCEM provides a measurement indicative of a short or leakage in the chamfer short-configured test area; and
,obtaining one or more third inline NCEMs from the third NCEM pad, where each third inline NCEM provides a measurement indicative of a short or leakage in the corner short-configured test area.
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Abstract
A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas.
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Citations
20 Claims
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1. A method for processing a semiconductor wafer, comprising at least the following acts:
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patterning a tip-to-side short-configured test area on the wafer; patterning a first non-contact electrical measurement (NCEM) pad on the wafer; patterning one or more connections to (i) electrically connect a first portion of the tip-to-side short-configured test area to the first NCEM pad and (ii) electrically connect a second portion of the tip-to-side short-configured test area to a permanent or virtual ground; patterning a chamfer short-configured test area on the wafer; patterning a second NCEM pad on the wafer; patterning one or more connections to (i) electrically connect a first portion of the chamfer short-configured test area to the second NCEM pad and (ii) electrically connect a second portion of the chamfer short-configured test area to a permanent or virtual ground; patterning a corner short-configured test area on the wafer; patterning a third NCEM pad on the wafer; patterning one or more connections to (i) electrically connect a first portion of the corner short-configured test area to the third NCEM pad and (ii) electrically connect a second portion of the corner short-configured test area to a permanent or virtual ground; obtaining one or more first inline non-contact electrical measurements (inline NCEMs) from the first NCEM pad, where each first inline NCEM provides a measurement indicative of a short or leakage in the tip-to-side short-configured test area; obtaining one or more second inline NCEMs from the second NCEM pad, where each second inline NCEM provides a measurement indicative of a short or leakage in the chamfer short-configured test area; and
,obtaining one or more third inline NCEMs from the third NCEM pad, where each third inline NCEM provides a measurement indicative of a short or leakage in the corner short-configured test area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification