Display device and method for manufacturing display device

• US 10,199,393 B2
• Filed: 11/06/2017
• Issued: 02/05/2019
• Est. Priority Date: 07/12/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US15/804,376
• Publication Number:
  US 20180122831A1
• Time in Patent Office: 456 Days
• Field of Search: 257 40, 257 43, 257 59, 257 66, 257E29063, 257E29068, 257E33053, 257E33063, 257E51018, 438 23, 438104, 438158
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.

Claims

1. A display device comprising:

a flexible substrate;

a first gate electrode over the flexible substrate;

a first insulating film comprising silicon and oxygen over the first gate electrode;

an oxide semiconductor film over and in contact with the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc;

a second insulating film over the oxide semiconductor film;

a second gate electrode over the second insulating film, the second gate electrode overlapping with the oxide semiconductor film and the first gate electrode;

a source electrode in contact with the oxide semiconductor film;

a drain electrode in contact with the oxide semiconductor film;

a third insulating film over the second insulating film; and

a capacitor over the flexible substrate, the capacitor comprising;

a first electrode over and in contact with the first insulating film, the first electrode comprising indium, gallium, and zinc;

the third insulating film over and in contact with the first electrode; and

a second electrode over the third insulating film,

wherein the first electrode is electrically connected to one of the source electrode and the drain electrode, and

wherein the first electrode comprises a portion which does not overlap with the second insulating film.

2. The display device according to claim 1, wherein the first electrode comprises hydrogen.

3. The display device according to claim 1, wherein the third insulating film is in contact with a side surface of the second insulating film.

4. The display device according to claim 1, wherein the second insulating film and the third insulating film are over the source electrode and the drain electrode and under the second gate electrode.

5. The display device according to claim 1, wherein the second gate electrode comprises a same element as the second electrode.

6. A display device comprising:

a flexible substrate;

a first gate electrode over the flexible substrate;

a first insulating film comprising silicon and oxygen over the first gate electrode;

an oxide semiconductor film over and in contact with the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc;

a second insulating film over the oxide semiconductor film;

a second gate electrode over the second insulating film, the second gate electrode overlapping with the oxide semiconductor film and the first gate electrode;

a third insulating film over the second insulating film; and

a capacitor over the flexible substrate, the capacitor comprising;

a first electrode over and in contact with the first insulating film, the first electrode comprising indium, gallium, and zinc;

the third insulating film over and in contact with the first electrode; and

a second electrode over the third insulating film,

wherein the first electrode comprises a portion which does not overlap with the second insulating film, and

wherein a portion of the second electrode is over the second insulating film and the third insulating film.

7. The display device according to claim 6, wherein the first electrode comprises hydrogen.

8. The display device according to claim 6, wherein the third insulating film is in contact with a side surface of the second insulating film.

9. The display device according to claim 6, wherein the second insulating film and the third insulating film are over a source electrode and a drain electrode and under the second gate electrode.

10. The display device according to claim 6, wherein the second gate electrode comprises a same element as the second electrode.

11. A display device comprising:

a flexible substrate;

a first gate electrode over the flexible substrate;

a first insulating film comprising silicon and oxygen over the first gate electrode;

an oxide semiconductor film over and in contact with the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc;

a second insulating film over the oxide semiconductor film;

a second gate electrode over the second insulating film, the second gate electrode overlapping with the oxide semiconductor film and the first gate electrode;

a source electrode in contact with the oxide semiconductor film;

a drain electrode in contact with the oxide semiconductor film;

a third insulating film over the second insulating film;

a capacitor over the flexible substrate, the capacitor comprising;

a first electrode over and in contact with the first insulating film, the first electrode comprising indium, gallium, and zinc;

the third insulating film over and in contact with the first electrode; and

a second electrode over the third insulating film;

a fourth insulating film over the second gate electrode and the capacitor; and

a light-emitting element over the fourth insulating film, the light-emitting element comprising;

a third electrode comprising a light-transmitting conductive material;

a light emitting layer over the third electrode; and

a fourth electrode over the light emitting layer,

wherein the first electrode is electrically connected to one of the source electrode and the drain electrode, and

wherein the first electrode comprises a portion which does not overlap with the second insulating film.

12. The display device according to claim 11, wherein the first electrode comprises hydrogen.

13. The display device according to claim 11, wherein the third insulating film is in contact with a side surface of the second insulating film.

14. The display device according to claim 11, wherein the second insulating film and the third insulating film are over the source electrode and the drain electrode and under the second gate electrode.

15. The display device according to claim 11, wherein the second gate electrode comprises a same element as the second electrode.

16. The display device according to claim 11, wherein the light-emitting element is configured to emit white light.

17. The display device according to claim 11, further comprising a coloring layer overlapping with the light-emitting element.