Display device

• US 10,199,394 B2
• Filed: 10/21/2014
• Issued: 02/05/2019
• Est. Priority Date: 10/22/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyake, Hiroyuki, Katayama, Masahiro
• Primary Examiner(s): Stark, Jarrett
• Application Number:
  US14/519,524
• Publication Number:
  US 20150108474A1
• Time in Patent Office: 1,568 Days
• Field of Search: 257 43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided is a display device with high display quality. The display device includes a transistor over a substrate, an inorganic insulating film over the transistor, an organic insulating film over the inorganic insulating film, a capacitor electrically connected to the transistor, and a pixel electrode over the organic insulating film. The transistor includes a gate electrode over the substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. The capacitor includes a metal oxide film over the gate insulating film, the inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. The pixel electrode is formed of a second light-transmitting conductive film and in contact with one of the pair of conductive films and the first light-transmitting conductive film.

Claims

1. A display device comprising:

a transistor over a substrate, the transistor comprising;

a gate electrode over the substrate;

an oxide semiconductor film overlapping with the gate electrode;

a gate insulating film in contact with one surface of the oxide semiconductor film; and

a pair of conductive films in electrical contact with the oxide semiconductor film;

an inorganic insulating film over the transistor;

an organic insulating film over the inorganic insulating film;

a capacitor electrically connected to the transistor, the capacitor comprising;

a metal oxide film over the gate insulating film;

the inorganic insulating film over the metal oxide film; and

a first light-transmitting conductive film over the inorganic insulating film, and

a pixel electrode over the organic insulating film and the first light-transmitting conductive film, the pixel electrode including a second light-transmitting conductive film in electrical contact with one of the pair of conductive films and the first light-transmitting conductive film,

wherein the pixel electrode overlaps the first light-transmitting conductive film with the organic insulating film interposed therebetween.

2. The display device according to claim 1, wherein the inorganic insulating film includes an oxide insulating film in contact with the other surface of the oxide semiconductor film and a nitride insulating film in contact with the oxide insulating film.

3. The display device according to claim 2, wherein the metal oxide film is in contact with the nitride insulating film, and contains a same metal element as a metal element contained in the oxide semiconductor film.

4. The display device according to claim 1, wherein the oxide semiconductor film contains at least one of In—

Ga oxide, In—

Zn oxide, and In-M-Zn oxide, where M is one of Al, Ti, Ga, Y, Zr, Sn, La, Ce, Nd, Sn, and Hf.

5. The display device according to claim 1,

wherein the oxide semiconductor film has a multilayer structure including a first film and a second film, and

wherein an atomic ratio of metal elements in the first film is different from an atomic ratio of metal elements in the second film.

6. The display device according to claim 1, wherein the display device is incorporated in one selected from the group consisting of a portable information terminal, a portable music player, a mobile phone, and a television set.

7. A display device comprising:

a transistor over a substrate, the transistor comprising;

a gate electrode over the substrate;

an oxide semiconductor film overlapping with the gate electrode;

a gate insulating film in contact with one surface of the oxide semiconductor film; and

a pair of conductive films in electrical contact with the oxide semiconductor film;

an inorganic insulating film over the transistor;

an organic insulating film over the inorganic insulating film;

a capacitor electrically connected to the transistor, the capacitor comprising;

a metal oxide film over the gate insulating film, and in contact with one of the pair of conductive films;

the inorganic insulating film over the metal oxide film; and

a first light-transmitting conductive film over the inorganic insulating film, and

a pixel electrode over the organic insulating film and the first light-transmitting conductive film, the pixel electrode including a second light-transmitting conductive film in electrical contact with the one of the pair of conductive films,

wherein the pixel electrode overlaps the first light-transmitting conductive film with the organic insulating film interposed therebetween.

8. The display device according to claim 7, wherein the inorganic insulating film includes an oxide insulating film in contact with the other surface of the oxide semiconductor film and a nitride insulating film in contact with the oxide insulating film.

9. The display device according to claim 8, wherein the metal oxide film is in contact with the nitride insulating film, and contains a same metal element as a metal element contained in the oxide semiconductor film.

10. The display device according to claim 7, wherein the oxide semiconductor film contains at least one of In—

Ga oxide, In—

Zn oxide, and In-M-Zn oxide, where M is one of Al, Ti, Ga, Y, Zr, Sn, La, Ce, Nd, Sn, and Hf.

11. The display device according to claim 7,

wherein the oxide semiconductor film has a multilayer structure including a first film and a second film, and

wherein an atomic ratio of metal elements in the first film is different from an atomic ratio of metal elements in the second film.

12. The display device according to claim 7, wherein the display device is incorporated in one selected from the group consisting of a portable information terminal, a portable music player, a mobile phone, and a television set.