Methods of forming a gate cap layer above a replacement gate structure

• US 10,199,479 B2
• Filed: 10/30/2015
• Issued: 02/05/2019
• Est. Priority Date: 01/18/2012
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Grasshoff, Gunter, Labelle, Catherine
• Primary Examiner(s): Chen, Jack
• Application Number:
  US14/928,681
• Publication Number:
  US 20160056263A1
• Time in Patent Office: 1,194 Days
• Field of Search: None
• CPC Class Codes: H01L 21/31055 the removal being a chemical etching step, e.g. dry etching etching per se H01L21/311
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate

Abstract

A method includes performing a first chemical mechanical polishing process to define a polished replacement gate structure having a dished upper surface, wherein the polished dished upper surface of the polished replacement gate structure has a substantially curved concave configuration. A gate cap layer is formed above the polished replacement gate structure, wherein a bottom surface of the gate cap layer corresponds to the polished dished upper surface of the polished replacement gate structure.

Claims

1. A method, comprising:

forming a replacement gate structure in a gate opening defined by sidewall spacers positioned in a layer of insulating material;

performing a common etching process on at least said sidewall spacers and said layer of insulating material, wherein after completing said common etching process, an etched upper surface of said sidewall spacers is recessed relative to an etched upper surface of said layer of insulating material and an upper surface of said replacement gate structure extends above said etched upper surface of said layer of insulating material;

after performing said common etching process, performing a first chemical mechanical polishing process to remove at least portions of said replacement gate structure that extend above said etched upper surface of said layer of insulating material and thereby define a polished replacement gate structure having a polished upper surface; and

after performing said first chemical mechanical polishing process, forming a gate cap layer above said polished upper surface of said polished replacement gate structure.

2. The method of claim 1, wherein forming said gate cap layer comprises:

forming a layer of gate cap material above said polished upper surface of said polished replacement gate structure; and

performing a second chemical mechanical polishing process on said layer of gate cap material so as to define a substantially planar polished upper surface of said gate cap layer.

3. The method of claim 1, wherein said sidewall spacers are comprised of silicon nitride and said layer of insulating material is comprised of silicon dioxide.

4. The method of claim 3, wherein said common etching process is performed using a C_xH_yF_z based etch chemistry.

5. The method of claim 4, wherein said common etching process is adjusted to provide etch selectivity between silicon nitride and silicon dioxide.

6. The method of claim 1, wherein said replacement gate structure is exposed to said common etching process.

7. The method of claim 1, wherein forming said replacement gate structure comprises performing a third chemical mechanical polishing process so that said upper surface of said replacement gate structure is substantially co-planar with an upper surface of said layer of insulating material, and wherein said common etching process is performed after said third chemical mechanical polishing process.

8. The method of claim 1, wherein said replacement gate structure comprises a first metal layer and a second metal layer positioned on said first metal layer, and wherein after performing said first chemical mechanical polishing process, a portion of a polished upper surface of said second metal layer is recessed below a portion of a polished upper surface of said first metal layer.

9. The method of claim 1, wherein performing said first chemical mechanical polishing process on said replacement gate structure further comprises performing said first chemical mechanical polishing process on said sidewall spacers, wherein after performing said first chemical mechanical polishing process, a portion of said polished upper surface of said replacement gate structure is recessed below a portion of a polished upper surface of said sidewall spacers, and wherein forming said gate cap layer comprises forming said gate cap layer on and in direct contact with said polished upper surface of said replacement gate structure and on and in direct contact with said polished upper surface of said sidewall spacers.

10. A method, comprising:

forming a replacement gate structure in a gate opening defined by sidewall spacers positioned in a layer of insulating material;

performing a common etching process on at least said sidewall spacers and said layer of insulating material, wherein after completing said common etching process, an etched upper surface of said sidewall spacers is recessed relative to an etched upper surface of said layer of insulating material and an upper surface of said replacement gate structure extends above said etched upper surface of said layer of insulating material;

after performing said common etching process, performing a first chemical mechanical polishing process to remove at least portions of said replacement gate structure that extend above said etched upper surface of said layer of insulating material and thereby define a polished replacement gate structure having a dished upper surface, said polished dished upper surface of said polished replacement gate structure defining a recess having a depth; and

after performing said first chemical mechanical polishing process, forming a gate cap layer above said polished dished upper surface of said polished replacement gate structure, said gate cap layer having a bottom surface that corresponds to said polished dished upper surface of said polished replacement gate structure.

11. The method of claim 10, wherein said replacement gate structure comprises a first metal layer and a second metal layer positioned on said first metal layer, and wherein after performing said first chemical mechanical polishing process, a portion of a polished upper surface of said second metal layer is recessed below a portion of a polished upper surface of said first metal layer.

12. The method of claim 10, wherein said replacement gate structure comprises a high-k gate insulation layer, a first metal layer positioned on said high-k gate insulation layer, and a second metal layer positioned on said first metal layer, and wherein after performing said first chemical mechanical polishing process, a portion of a polished upper surface of said second metal layer is recessed below a portion of a polished upper surface of said first metal layer and said portion of said polished upper surface of said first metal layer is recessed below a portion of a polished upper surface of said high-k gate insulation layer.

13. The method of claim 10, wherein performing said first chemical mechanical polishing process on said replacement gate structure further comprises performing said first chemical mechanical polishing process on said sidewall spacers, wherein after performing said first chemical mechanical polishing process, a portion of said polished upper surface of said replacement gate structure is recessed below a portion of a polished upper surface of said sidewall spacers, and wherein forming said gate cap layer comprises forming said gate cap layer on and in direct contact with said polished upper surface of said replacement gate structure and on and in direct contact with said polished upper surface of said sidewall spacers.