Semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming a first transistor and a second transistor;
wherein the first transistor comprises;
a first oxide over a first insulating film;
a first gate insulating film over the first oxide; and
a first gate electrode over the first gate insulating film,wherein the second transistor comprises;
a second oxide over the first insulating film;
a second gate insulating film over the second oxide; and
a second gate electrode over the second gate insulating film,forming a second insulating film covering the first transistor and the second transistor;
forming a third insulating film by etching the second insulating film, wherein the third insulating film covers at least part of the first transistor; and
forming a fourth insulating film over the third insulating film, the first transistor and the second transistor,wherein the third insulating film is in contact with the first gate insulating film and a first region of the first insulating film,wherein the fourth insulating film is in contact with the second gate insulating film and a second region of the first insulating film, andwherein the second insulating film comprises a metal oxide.
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Accused Products
Abstract
A high-performance semiconductor device with high reliability is provided. The semiconductor device includes a first transistor, a second transistor, a first metal oxide covering at least part of the first transistor, an insulating film over the first transistor and the second transistor, and a second metal oxide over the insulating film. The first transistor includes a first gate electrode, a first gate insulating film, a first oxide, a first source electrode, a first drain electrode, a second gate insulating film, and a second gate electrode. The second transistor includes a third gate electrode, a third gate insulating film, a second oxide, a second source electrode, a second drain electrode, a fourth gate insulating film, and a fourth gate electrode. The first gate insulating film and the second gate insulating film are in contact with the first metal oxide.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a first transistor and a second transistor; wherein the first transistor comprises; a first oxide over a first insulating film; a first gate insulating film over the first oxide; and a first gate electrode over the first gate insulating film, wherein the second transistor comprises; a second oxide over the first insulating film; a second gate insulating film over the second oxide; and a second gate electrode over the second gate insulating film, forming a second insulating film covering the first transistor and the second transistor; forming a third insulating film by etching the second insulating film, wherein the third insulating film covers at least part of the first transistor; and forming a fourth insulating film over the third insulating film, the first transistor and the second transistor, wherein the third insulating film is in contact with the first gate insulating film and a first region of the first insulating film, wherein the fourth insulating film is in contact with the second gate insulating film and a second region of the first insulating film, and wherein the second insulating film comprises a metal oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising:
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forming a first oxide and a second oxide over a first insulating film; forming a second insulating film over the first oxide and the second oxide; forming a first gate electrode and a second gate electrode over the second insulating film, wherein the first gate electrode is over the first oxide and the second gate electrode is over the second oxide; forming a first gate insulating film and a second gate insulating film by etching the second insulating film, wherein the first gate electrode is over the first gate insulating film and the second gate electrode is over the second gate insulating film; forming a third insulating film over the first oxide, the first gate electrode, the second oxide and the second gate electrode; forming a fourth insulating film by etching the third insulating film, wherein the fourth insulating film covers the first oxide; and forming a fifth insulating film over the fourth insulating film, the second oxide and the second gate electrode, wherein the fourth insulating film is in contact with the first gate insulating film and a first region of the first insulating film, wherein the fifth insulating film is in contact with the second gate insulating film and a second region of the first insulating film, and wherein the third insulating film comprises a metal oxide. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor device comprising:
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forming a first oxide and a second oxide over a first insulating film; forming a second insulating film over the first oxide and the second oxide; forming a first gate electrode and a second gate electrode over the second insulating film, wherein the first gate electrode is over the first oxide and the second gate electrode is over the second oxide; forming a third insulating film over the first oxide, the first gate electrode, the second oxide and the second gate electrode; etching the second insulating film and the third insulating film so as to form a first gate insulating film and a second gate insulating film from the second insulating film and a fourth insulating film and a fifth insulating film from the third insulating film, wherein the first gate electrode is over the first gate insulating film and the second gate electrode is over the second gate insulating film; and forming a sixth insulating film over the fourth insulating film and the fifth insulating film, wherein the fourth insulating film is in contact with the first gate insulating film and covers the first oxide, wherein the fifth insulating film is in contact with the second gate insulating film and an end portion of the fifth insulating film overlaps the second oxide, wherein the sixth insulating film is in contact with the first gate insulating film, the second gate insulating film, the second oxide and the first insulating film, and wherein the third insulating film comprises a metal oxide. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification