Light-emitting diode, light-emitting diode package, and lighting system including same
First Claim
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1. A light emitting diode comprising:
- a substrate;
a first conductive semiconductor layer on the substrate;
an active layer on the first conductive semiconductor layer; and
a light emitting structure, including a second conductive semiconductor layer on the active layer, wherein the active layer comprises at least one quantum well layer and at least one quantum barrier layer, wherein the at least one quantum well layer includes a plurality of well layers having different indium composition ratios and a plurality of protrusion parts having different indium composition ratios, wherein one of the plurality of well layers is disposed at a center portion of the at least one quantum well layer and has the highest indium composition ratio in the at least one quantum well layer, wherein each of the plurality of protrusion parts is disposed between the plurality of well layers, wherein the plurality of protrusion parts has a lower indium composition ratio than that of the one of the plurality of well layers, wherein a band-gap energy of the plurality of protrusion parts is smaller than that of the at least one quantum barrier layer, wherein the plurality of protrusion parts are a region of a band-gap energy of the at least one quantum well layer.
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Abstract
A light emitting diode according to an embodiment includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a light emitting structure including a second conductive semiconductor layer on the active layer, wherein the active layer includes at least one quantum well layer and at least one quantum barrier layer, and each of the quantum well layers includes a plurality of well layers having different indium composition ratios, thereby improving internal quantum efficiency.
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Citations
20 Claims
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1. A light emitting diode comprising:
- a substrate;
a first conductive semiconductor layer on the substrate;
an active layer on the first conductive semiconductor layer; and
a light emitting structure, including a second conductive semiconductor layer on the active layer, wherein the active layer comprises at least one quantum well layer and at least one quantum barrier layer, wherein the at least one quantum well layer includes a plurality of well layers having different indium composition ratios and a plurality of protrusion parts having different indium composition ratios, wherein one of the plurality of well layers is disposed at a center portion of the at least one quantum well layer and has the highest indium composition ratio in the at least one quantum well layer, wherein each of the plurality of protrusion parts is disposed between the plurality of well layers, wherein the plurality of protrusion parts has a lower indium composition ratio than that of the one of the plurality of well layers, wherein a band-gap energy of the plurality of protrusion parts is smaller than that of the at least one quantum barrier layer, wherein the plurality of protrusion parts are a region of a band-gap energy of the at least one quantum well layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
- a substrate;
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15. A light emitting diode comprising:
- a substrate;
a first conductive semiconductor layer on the substrate;
an active layer on the first conductive semiconductor layer; and
a light emitting structure, including a second conductive semiconductor layer on the active layer, wherein the active layer comprises at least one quantum well layer and at least one quantum barrier layer, wherein the at least one quantum well layer comprises a first well layer adjacent to the quantum barrier layer, a second well layer, and a third well layer having different indium composition ratios, the second well layer is disposed between the first well layer and the third well layer, wherein the at least one quantum well layer comprises a first protrusion part between the first well layer and the second well layer, and a second protrusion part between the second well layer and the third well layer, wherein an indium composition ratio of the second protrusion part is greater than that of the first protrusion part, wherein a width of the at least one quantum well layer is 3.0 nm or more and 3.5 nm or less, a width of the at least one quantum barrier layer is 4.5 nm or more and 5.5 nm or less, and a width of the first well layer is 0.6 nm or more and 0.7 nm or less, wherein the first and second protrusion parts are a region of a band-gap energy of the at least one quantum well layer. - View Dependent Claims (16)
- a substrate;
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17. A light emitting diode comprising:
- a first conductive semiconductor layer;
a second conductive semiconductor layer on the first conductive semiconductor layer;
an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the active layer comprises a first quantum barrier layer, a second quantum barrier layer on the first quantum barrier layer, and a quantum well layer between the first quantum barrier layer and the second quantum barrier layer, wherein the quantum well layer includes a plurality of well layers and a plurality of protrusion parts, wherein the plurality of well layers and the plurality of protrusion parts include an InGaN semiconductor and have a smaller band-gap energy than a band-gap energy of the first and second quantum barrier layers, wherein each of the plurality of protrusion parts is disposed between the plurality of well layers, wherein one of plurality of well layers is disposed at a center portion of the quantum well layer, wherein each of the plurality of protrusion parts has a lower indium composition ratio than that of the plurality of well layers, wherein a band-gap energy of each of the plurality of protrusion parts is smaller than that of the quantum barrier layer, wherein the plurality of protrusion parts are a region of a band-gap energy of the quantum well layer. - View Dependent Claims (18, 19, 20)
- a first conductive semiconductor layer;
Specification