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Light-emitting diode, light-emitting diode package, and lighting system including same

  • US 10,199,534 B2
  • Filed: 03/11/2016
  • Issued: 02/05/2019
  • Est. Priority Date: 03/11/2015
  • Status: Active Grant
First Claim
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1. A light emitting diode comprising:

  • a substrate;

    a first conductive semiconductor layer on the substrate;

    an active layer on the first conductive semiconductor layer; and

    a light emitting structure, including a second conductive semiconductor layer on the active layer, wherein the active layer comprises at least one quantum well layer and at least one quantum barrier layer, wherein the at least one quantum well layer includes a plurality of well layers having different indium composition ratios and a plurality of protrusion parts having different indium composition ratios, wherein one of the plurality of well layers is disposed at a center portion of the at least one quantum well layer and has the highest indium composition ratio in the at least one quantum well layer, wherein each of the plurality of protrusion parts is disposed between the plurality of well layers, wherein the plurality of protrusion parts has a lower indium composition ratio than that of the one of the plurality of well layers, wherein a band-gap energy of the plurality of protrusion parts is smaller than that of the at least one quantum barrier layer, wherein the plurality of protrusion parts are a region of a band-gap energy of the at least one quantum well layer.

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