Micro-transfer-printed acoustic wave filter device

• US 10,200,013 B2
• Filed: 02/18/2016
• Issued: 02/05/2019
• Est. Priority Date: 02/18/2016
• Status: Active Grant

• Current Assignee: X-Celeprint Limited
• Original Assignee: X-Celeprint Limited
• Inventors: Bower, Christopher, Meitl, Matthew, Cok, Ronald S.
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US15/047,250
• Publication Number:
  US 20170244386A1
• Time in Patent Office: 1,083 Days
• Field of Search: 333133, 333186, 333187, 333189, 333193, 333195, 29 2535
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 3/08 for the manufacture of resonators or networks using surface acoustic waves
• CPC Class Codes: H03H 9/02015 Characteristics of piezoelectric layers, e.g. cutting angles
• CPC Class Codes: H03H 9/02543 Characteristics of substrate, e.g. cutting angles
• CPC Class Codes: H03H 9/0509 consisting of adhesive elements
• CPC Class Codes: H03H 9/0585 consisting of an adhesive layer
• CPC Class Codes: H03H 9/54 comprising resonators of piezoelectric or electrostrictive material H03H9/64 takes precedence
• CPC Class Codes: H03H 9/564 implemented with thin-film techniques
• CPC Class Codes: H03H 9/64 using surface acoustic waves

Abstract

A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.

Claims

1. A compound acoustic wave filter device, comprising:

a support substrate comprising two or more circuit connection pads;

an acoustic wave filter comprising a piezoelectric filter element and two or more electrodes disposed on the piezoelectric filter element;

an adhesive layer located between the support substrate and the acoustic wave filter, wherein the acoustic wave filter is micro-transfer printed on the adhesive layer and the adhesive layer adheres the support substrate to the acoustic wave filter; and

two or more electrical conductors, each electrical conductor electrically connecting one of the two or more electrodes to one of the two or more circuit connection pads,

wherein the acoustic wave filter or the piezoelectric filter element comprises at least a portion of a tether.

2. The compound acoustic wave filter device of claim 1, wherein the two or more electrodes are formed on a common side of the piezoelectric filter element and the acoustic wave filter is a surface acoustic wave filter.

3. The compound acoustic wave filter device of claim 1, wherein each of at least two of the two or more electrodes are formed on one of two opposite sides of the piezoelectric filter element and the acoustic wave filter is a bulk acoustic wave filter.

4. The compound acoustic wave filter device of claim 1, wherein the adhesive layer adheres the support substrate to the acoustic wave filter either directly or indirectly.

5. The compound acoustic wave filter device of claim 4, wherein the adhesive layer comprises a cured adhesive material.

6. The compound acoustic wave filter device of claim 1, wherein the two or more electrodes each having a first opposing side and a second opposing side and the compound acoustic wave filter device comprises (i) an acoustic mirror layer located on the first opposing side of one of the two or more electrodes and the piezoelectric filter element located on the second opposing side of the one of the two or more electrodes, with the piezoelectric filter element located between the support substrate and the acoustic mirror layer, or (ii) an acoustic mirror layer located on the first opposing side of one of the two or more electrodes and the piezoelectric filter element located on the second opposing side with the acoustic mirror layer located between the support substrate and the piezoelectric filter element, or (iii) both (i) and (ii).

7. The compound acoustic wave filter device of claim 6, wherein at least one acoustic mirror layer is chemically etch-resistant.

8. The compound acoustic wave filter device of claim 1, wherein at least one of the two or more electrodes is chemically etch-resistant.

9. The compound acoustic wave filter device of claim 1, comprising a plurality of the acoustic wave filters micro-transfer printed on the adhesive layer, each acoustic wave filter of the plurality of acoustic wave filters comprising a piezoelectric filter element and two or more electrodes disposed on the piezoelectric filter element, wherein each of the two or more electrodes of each of the plurality of acoustic wave filters is connected to one of the two or more circuit connection pads with an electrical conductor.

10. The compound acoustic wave filter device of claim 9, wherein a first acoustic wave filter of the plurality of acoustic wave filters has one or more first attributes, a second acoustic wave filter of the plurality of acoustic wave filters has one or more second attributes and wherein at least one of the one or more first attributes is different from at least one of the one or more second attributes.

11. A method of making a compound acoustic wave filter device, comprising:

providing a support substrate comprising two or more circuit connection pads;

providing an acoustic wave filter, the acoustic wave filter comprising a piezoelectric filter element and two or more electrodes disposed in or on the piezoelectric filter element;

providing an adhesive layer located on the support substrate;

micro-transfer printing the acoustic wave filter onto the adhesive layer such that the adhesive layer is disposed between the support substrate and the acoustic wave filter;

adhering the support substrate to the acoustic wave filter; and

electrically connecting each of the two or more electrodes to one or more of the two or more circuit connection pads with electrical conductors.

12. The method of claim 11, wherein the support substrate is a semiconductor substrate, and the method comprises:

providing the semiconductor substrate with an active electronic circuit formed in or on the semiconductor substrate, the active electronic circuit electrically connected to one or more of the two or more circuit connection pads.

13. The method of claim 12, wherein the active electronic circuit is located at least partially between the acoustic wave filter and the semiconductor substrate.

14. The method of claim 11, wherein the electrical conductors are electrically conductive protrusions or spikes extending from the acoustic wave filter or the piezoelectric filter element, and the method comprises:

pressing the electrically conductive protrusions or spikes against, into, or through the two or more circuit connection pads to form an electrical connection between the electrodes and the two or more circuit connection pads.

15. The method of claim 11, comprising:

providing a plurality of acoustic wave filters comprising a corresponding plurality of piezoelectric filter elements;

micro-transfer printing the plurality of acoustic wave filters and the corresponding plurality of piezoelectric filter elements onto the adhesive layer; and

electrically connecting each of the two or more electrodes of each of the piezoelectric filter elements to one or more of the two or more circuit connection pads with the electrical conductors.

16. A compound acoustic wave filter device, comprising:

a support substrate comprising two or more circuit connection pads;

an acoustic wave filter comprising a piezoelectric filter element and two or more electrodes disposed on the piezoelectric filter element;

an adhesive layer located between the support substrate and the acoustic wave filter, wherein the acoustic wave filter is micro-transfer printed on the adhesive layer and the adhesive layer adheres the support substrate to the acoustic wave filter;

two or more electrical conductors, each electrical conductor electrically connecting one of the two or more electrodes to one of the two or more circuit connection pads;

and an active electronic circuit formed in or on the support substrate, the active electronic circuit electrically connected to one or more of the two or more circuit connection pads, wherein the support substrate is a semiconductor substrate.

17. The compound acoustic wave filter device of claim 16, wherein the active electronic circuit is located at least partially between the acoustic wave filter and the semiconductor substrate.

18. The compound acoustic wave filter device of claim 16, wherein the semiconductor substrate is at least one of a silicon semiconductor substrate, a compound semiconductor substrate, a III-V semiconductor substrate, a crystalline material substrate, and a crystalline semiconductor material substrate.

19. A compound acoustic wave filter device, comprising:

a support substrate comprising two or more circuit connection pads;

an acoustic wave filter comprising a piezoelectric filter element and two or more electrodes disposed on the piezoelectric filter element;

an adhesive layer located between the support substrate and the acoustic wave filter, wherein the acoustic wave filter is micro-transfer printed on the adhesive layer and the adhesive layer adheres the support substrate to the acoustic wave filter; and

two or more electrical conductors, each electrical conductor electrically connecting one of the electrodes to one of the two or more circuit connection pads,

wherein the electrical conductors are electrically conductive protrusions or spikes extending from the acoustic wave filter, a portion or layer of the acoustic wave filter, or the piezoelectric filter element, and

wherein the electrically conductive protrusions or spikes are pressed into or through the two or more circuit connection pads.