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Quality evaluation method for laminate having protective layer on surface of oxide semiconductor thin film and quality control method for oxide semiconductor thin film

  • US 10,203,367 B2
  • Filed: 06/22/2015
  • Issued: 02/12/2019
  • Est. Priority Date: 07/01/2014
  • Status: Active Grant
First Claim
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1. A quality evaluation method of a laminate including a protective film on a surface of an oxide semiconductor thin film,wherein a defect caused by an interface state between the oxide semiconductor thin film and the protective film is evaluated by measuring a sheet resistance or a specific resistance of the oxide semiconductor thin film by a contact method or a noncontact method,wherein the defect caused by the interface state is one of the following (1) to (3)(1) threshold voltage Vth of a thin film transistor,(2) a difference in threshold voltage Δ

  • Vth between before and after application of a positive bias when the positive bias is applied to the thin film transistor, and(3) a difference between a threshold voltage at first measurement and a threshold voltage after multiple times of measurement when the threshold voltage of the thin film transistor is measured multiple times.

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