Combined anneal and selective deposition process
First Claim
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1. A method of selectively forming a film comprising:
- providing a substrate for processing in a reaction chamber, the substrate having at least one polymer layer disposed on the substrate;
performing an annealing step on the substrate; and
performing a film deposition at a temperature lower than a temperature of the annealing step by sequentially pulsing a first precursor and a second precursor onto the substrate, the film deposition being configured to enable infiltration of at least the first precursor into the at least one polymer layer, wherein an excess of the first precursor and the second precursor are purged from the reaction chamber;
wherein a film forms on the at least one polymer from the first precursor; and
wherein the film deposition comprises;
pulsing the first precursor onto the substrate;
purging the first precursor from the reaction chamber;
pulsing the second precursor onto the substrate; and
purging the second precursor from the reaction chamber.
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Abstract
A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.
204 Citations
24 Claims
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1. A method of selectively forming a film comprising:
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providing a substrate for processing in a reaction chamber, the substrate having at least one polymer layer disposed on the substrate; performing an annealing step on the substrate; and performing a film deposition at a temperature lower than a temperature of the annealing step by sequentially pulsing a first precursor and a second precursor onto the substrate, the film deposition being configured to enable infiltration of at least the first precursor into the at least one polymer layer, wherein an excess of the first precursor and the second precursor are purged from the reaction chamber; wherein a film forms on the at least one polymer from the first precursor; and wherein the film deposition comprises; pulsing the first precursor onto the substrate; purging the first precursor from the reaction chamber; pulsing the second precursor onto the substrate; and purging the second precursor from the reaction chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 14, 15, 16, 17)
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13. A method of selectively forming a film comprising:
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providing a substrate for processing in a reaction chamber, the substrate having at least one polymer layer disposed on the substrate; performing an annealing step on the substrate; and performing a film deposition by sequentially pulsing a first precursor and a second precursor onto the substrate, the film deposition being configured to enable infiltration of at least the first precursor into the at least one polymer layer, wherein an excess of the first precursor and the second precursor are purged from the reaction chamber;
wherein a film forms on the at least one polymer from the first precursor, and wherein the annealing step and the film deposition take place within different reaction chambers located on the same cluster tool.
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18. A method of selectively forming a film comprising:
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providing a substrate for processing in a reaction chamber, the substrate having at least one polymer layer disposed on the substrate; performing a film deposition by sequentially pulsing a first precursor and a second precursor onto the substrate, the film deposition being configured to enable infiltration of at least the first precursor into the at least one polymer layer, wherein an excess of the first precursor and the second precursor are purged from the reaction chamber; and after performing the film deposition, performing an annealing step on the substrate at a temperature higher than a temperature of the film deposition; wherein a film forms on the at least one polymer from the first precursor; and wherein the film deposition comprises; pulsing the first precursor onto the substrate; purging the first precursor from the reaction chamber; pulsing the second precursor onto the substrate; and purging the second precursor from the reaction chamber. - View Dependent Claims (19, 21, 22, 23, 24)
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20. A method of selectively forming a film comprising:
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providing a substrate for processing in a reaction chamber, the substrate having at least one polymer layer disposed on the substrate; performing a film deposition by sequentially pulsing a first precursor and a second precursor onto the substrate, the film deposition being configured to enable infiltration of at least the first precursor into the at least one polymer layer, wherein an excess of the first precursor and the second precursor are purged from the reaction chamber; and after performing the film deposition, performing an annealing step on the substrate, wherein a film forms on the at least one polymer from the first precursor, wherein the annealing step and the film deposition take place within different reaction chambers located on the same cluster tool.
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Specification