Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
First Claim
1. A semiconductor device, comprising:
- a first transistor comprising a fin arranged on a substrate, the fin having a first relaxed silicon germanium layer arranged on the substrate; and
a second transistor adjacent to the first transistor and comprising a fin arranged on the substrate, the fin of the second transistor having a second relaxed silicon germanium layer arranged on the substrate and a tensile strained silicon germanium layer arranged on the second relaxed silicon germanium layer, the second relaxed silicon germanium layer comprising a germanium content that is different than the first relaxed silicon germanium layer.
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Accused Products
Abstract
A method of making a semiconductor device includes forming a first silicon germanium layer on a substrate, the first silicon germanium layer forming a portion of a first transistor; forming a second silicon germanium layer on the substrate adjacent to the first silicon germanium layer, the second silicon germanium layer forming a portion of a second transistor and having a germanium content that is different than the first silicon germanium layer and a thickness that is substantially the same; growing by an epitaxial process a compressively strained silicon germanium layer on the first silicon germanium layer, and a tensile strained silicon germanium layer on the second silicon germanium layer; patterning a first fin in the compressively strained silicon germanium layer and the first silicon germanium layer; and patterning a second fin in the tensile strained silicon germanium layer and the second silicon germanium layer.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a first transistor comprising a fin arranged on a substrate, the fin having a first relaxed silicon germanium layer arranged on the substrate; and a second transistor adjacent to the first transistor and comprising a fin arranged on the substrate, the fin of the second transistor having a second relaxed silicon germanium layer arranged on the substrate and a tensile strained silicon germanium layer arranged on the second relaxed silicon germanium layer, the second relaxed silicon germanium layer comprising a germanium content that is different than the first relaxed silicon germanium layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a first fin arranged on a substrate, the first fin comprising a silicon germanium layer; and a second fin arranged on the substrate, the second fin comprising a relaxed silicon germanium layer and a tensile strained silicon germanium layer arranged on the relaxed silicon germanium layer, the relaxed silicon germanium layer comprising a germanium content that is different than the silicon germanium layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification