Systems and methods for rapidly fabricating nanopatterns in a parallel fashion over large areas
First Claim
Patent Images
1. A method for creating an array of substantially uniform features in a substrate, the method comprising the steps of:
- processing a substrate to provide a plurality of electrostatic lenses,wherein the substrate comprises a bottom layer of semiconductive material, a lens layer above the bottom layer, and an electrode layer above the lens layer, andeach of the plurality of electrostatic lenses comprises an opening in the electrode layer and the lens layer;
performing nanopantography on the substrate for a first predetermined amount of time to generating a masking layer with a pattern on the bottom layer, wherein the nanopantography generates the masking layer by utilizing the electrostatic lenses to generate the pattern with an ion beam; and
performing a second etching on the substrate to transfer the pattern in the masking layer produced by the nanopantography step to the bottom layer to form an array of nanofeatures.
2 Assignments
0 Petitions
Accused Products
Abstract
Nanopantography is a method for patterning nanofeatures over large areas. Transfer of patterns defined by nanopantography using highly selective plasma etching, with an oxide layer of silicon serving as a hard mask, can improve patterning speed and etch profile. With this method, high aspect ratio features can be fabricated in a substrate with no mask undercut. The ability to fabricate complex patterns using nanopantography, followed by highly selective plasma etching, provides improved patterning speed, feature aspect ratio, and etching profile.
8 Citations
23 Claims
-
1. A method for creating an array of substantially uniform features in a substrate, the method comprising the steps of:
-
processing a substrate to provide a plurality of electrostatic lenses, wherein the substrate comprises a bottom layer of semiconductive material, a lens layer above the bottom layer, and an electrode layer above the lens layer, and each of the plurality of electrostatic lenses comprises an opening in the electrode layer and the lens layer; performing nanopantography on the substrate for a first predetermined amount of time to generating a masking layer with a pattern on the bottom layer, wherein the nanopantography generates the masking layer by utilizing the electrostatic lenses to generate the pattern with an ion beam; and performing a second etching on the substrate to transfer the pattern in the masking layer produced by the nanopantography step to the bottom layer to form an array of nanofeatures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. A substrate with an array of nanofeatures, the substrate comprising:
-
a bottom layer of semiconductive material; a masking layer on top of the bottom layer; a lens layer on top of the masking layer; an electrode layer above the lens layer; a plurality of lens openings in the electrode layer and the lens layer, wherein each of the plurality of lens openings is a nanoscale sized opening, and each of the plurality of lens openings allow an ion beam to be focused when a voltage is applied across the electrode layer and the bottom layer; and an array of nanofeatures in the masking layer and the bottom layer, wherein each of the array of nanofeatures comprises an opening in a first region in the masking layer patterned using nanopantography, wherein the nanopantography writes a pattern in the masking layer by utilizing the electrostatic lenses to focus and write the pattern with an ion beam, and a second region in the bottom layer formed by a second etching that transfers a pattern of the masking layer produced by the nanopantography step into the bottom layer. - View Dependent Claims (18, 19, 20, 21, 22, 23)
-
Specification