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Semiconductor device and manufacturing method thereof

  • US 10,211,060 B2
  • Filed: 11/22/2016
  • Issued: 02/19/2019
  • Est. Priority Date: 02/27/2014
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • providing a first semiconductor layer having a first major surface and at least one trench structure disposed within in the first semiconductor layer extending from the first major surface, wherein the trench structure comprises an isolating layer along a first wall, a bottom surface, and an opposite second wall, and a conductive material disposed between the first wall and the second wall;

    forming a first layer adjacent to the first major surface, wherein the first layer comprises a first metal and a second metal, and wherein the first layer is adjacent to the conductive material and the isolating layer;

    forming a second layer comprising a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing;

    subjecting the first semiconductor layer to at least a first annealing act whereby the first layer reacts with the first semiconductor layer to form a Schottky barrier structure and reacts with the conductive layer to form a contact structure, and wherein a portion of the first layer remains unreacted after the first annealing act; and

    removing the portion of the first layer that remains unreacted, wherein an opening is thereby formed to expose the isolating layer at the first wall of the trench structure and between the Schottky barrier structure formed adjacent to the first semiconductor layer and the contact structure formed adjacent to the conductive layer.

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