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Display device including transistor and manufacturing method thereof

  • US 10,211,231 B2
  • Filed: 11/30/2017
  • Issued: 02/19/2019
  • Est. Priority Date: 07/03/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising;

    a first gate electrode over a substrate;

    a first gate insulating layer over the first gate electrode;

    an oxide semiconductor layer over the first gate insulating layer;

    a first insulating layer over the oxide semiconductor layer;

    a source electrode and a drain electrode over the first insulating layer;

    a second insulating layer over the source electrode and the drain electrode; and

    a second gate electrode over the second insulating layer;

    a resin layer over the second gate electrode;

    a pixel electrode over the resin layer;

    a light emitting layer over the pixel electrode; and

    an electrode over the light emitting layer,wherein the first insulating layer and the second insulating layer are configured to be a second gate insulating layer,wherein the second gate electrode comprises a transparent conductive layer,wherein the second gate electrode overlaps the source electrode and the drain electrode,wherein in a channel length direction of the transistor, a length of the first gate electrode is larger than a length of the oxide semiconductor layer, andwherein in the channel length direction of the transistor, a length of the second gate electrode is smaller than the length of the oxide semiconductor layer.

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