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Method and device for metal gate stacks

  • US 10,211,309 B2
  • Filed: 09/21/2016
  • Issued: 02/19/2019
  • Est. Priority Date: 10/19/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a high-k dielectric layer on the substrate;

    a first homogenous capping layer directly on the high-k dielectric layer;

    a first N-type work function metal layer directly on the first capping layer;

    a second N-type work function metal layer on the first N-type work function metal layer; and

    a metal electrode layer on the second N-type work function metal layer,wherein a Ti/Al atomic ratio of the second N-type work function metal layer is greater than a Ti/Al atomic ratio of the first N-type work function metal layer.

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