Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing

• US 10,215,704 B2
• Filed: 03/02/2017
• Issued: 02/26/2019
• Est. Priority Date: 03/02/2017
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Han, Taejoon, Morvay, Daniel, Vukovic, Mirko
• Primary Examiner(s): Ahmed, Jamil
• Application Number:
  US15/448,069
• Publication Number:
  US 20180252650A1
• Time in Patent Office: 726 Days
• CPC Class Codes: G01J 3/443 Emission spectrometry
• CPC Class Codes: G01N 2021/1787 Tomographic, i.e. computerised reconstruction from projective measurements
• CPC Class Codes: G01N 21/68 using high frequency electric fields
• CPC Class Codes: G01N 21/73 using plasma burners or torches
• CPC Class Codes: G01N 2201/1293 resolving multicomponent spectra
• CPC Class Codes: G06T 11/003 Reconstruction from projections, e.g. tomography
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32422 Arrangement for selecting ions or species in the plasma
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

Described herein are technologies to facilitate computed tomographic techniques to help identifying chemical species during plasma processing of a substrate (e.g., semiconductor wafer) using optical emission spectroscopy (OES). More particularly, the technology described herein uses topographic techniques to spatially resolves emissions and absorptions in at least two-dimension space above the substrate during the plasma processing (e.g., etching) of the substrate. With some implementations utilize optical detectors positioned along multiple axes (e.g., two or more) to receive incident incoming optical spectra from the plasma chamber during the plasma processing (e.g., etching) of the substrate. Because of the multi-axes arrangement, the incident incoming optical spectra form an intersecting grid.

Claims

1. A plasma optical emission spectrographic (OES) system comprising:

a first array of multiple OES optical detectors configured to have a first line-of-sight view of plasma over a substrate on a substrate holder in an etch chamber of a plasma processing system;

a second array of multiple OES optical detectors configured to have a second line-of-sight view of plasma in the etch chamber; and

circuitry configured to generate a computed tomographic reconstruction of chemical species of the plasma based on measurements received from the first array of multiple OES optical detectors and the second array of multiple OES optical detectors,

wherein, relative to each other, the first line-of-sight view and second line-of-sight view intersect within the etch chamber and are non-coextensive, non-parallel, and non-orthogonal,

wherein the generation of the computed tomographic reconstruction includes;

obtaining light measurements from light received from intersecting views of the first and second line-of-sight views;

identifying chemical species in the plasma based on the obtained light measurements;

determining spatial locations of the identified chemical species in the plasma based on the obtained light measurements;

associating the determined spatial locations in the plasma for one or more of the identified chemical species;

storing a tomographic reconstruction based on the association of the determined spatial locations in the plasma with the respective one or more of the identified chemical species.

2. A plasma OES system as recited in claim 1, wherein a central axis of each OES optical detector of a particular array is configured in parallel alignment with the other optical detectors of the same array.

3. A plasma OES system as recited in claim 1, wherein the first and second line-of-sight views are separated by an acute or an obtuse angle.

4. A plasma OES system as recited in claim 1, further comprising:

a first viewport configured to provide the first line-of-sight view to the etch chamber for the first array of multiple OES optical detectors;

a second viewport configured to provide the second line-of-sight view to the etch chamber for the second array of multiple OES optical detectors.

5. A plasma OES system as recited in claim 1, further comprising:

a first viewport configured to provide the first line-of-sight view to the etch chamber for the first array of multiple OES optical detectors;

a second viewport configured to provide the second line-of-sight view to the etch chamber for the second array of multiple OES optical detectors,

wherein the first and second viewport have a width at least as wide as a width of the substrate holder.

6. A plasma OES system as recited in claim 1, wherein each OES optical detector includes one spectrometer that is configured to observe one ray from the etch chamber, wherein the ray shares a common central axis with its optical detector.

7. A plasma OES system as recited in claim 1, wherein each OES optical detector includes multiple spectrometers, each spectrometer of each OES optical detector is configured to observe one ray from the etch chamber.

8. A plasma OES system as recited in claim 1, wherein each OES optical detector includes multiple spectrometers, wherein the spectrometers of each OES optical detector collectively observe a fan of rays from the etch chamber.

9. A plasma OES system as recited in claim 1, further comprising a third array of multiple OES optical detectors configured to have a third line-of-sight view of plasma in the etch chamber, wherein the third line-of-sight view intersects the first and second line-of-sight views within the etch chamber and the third line-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second line-of-sight views.

10. A plasma OES system as recited in claim 1, further comprising:

a third array of multiple OES optical detectors configured to have a third line-of-sight view of plasma in the etch chamber, wherein the third line-of-sight view intersects the first and second line-of-sight views within the etch chamber and the third line-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second line-of-sight views;

a third viewport configured to provide the third line-of-sight view to the etch chamber for the third array of multiple OES optical detectors.

11. A plasma OES system as recited in claim 1, wherein the substrate is a semiconductor wafer.

12. A plasma OES system as recited in claim 1, wherein at least one of the arrays includes at least one-hundred twenty-eight (128) OES optical detectors and/or wherein at least one of the OES optical detector includes at least one-hundred twenty-eight (128) OES spectrometers.

25. The plasma OES system as recited in claim 1, wherein the generation of the computed tomographic reconstruction further includes applying a Savitzky-Golay filter to reduce a number of data points.

26. The plasma OES system as recited in claim 1, wherein the circuitry is configured to generate a three-dimensional representation of the one or more identified chemical species in the plasma based on the stored tomographic reconstruction.

13. A computed tomography system for a plasma optical emission spectrography (OES), the system comprising:

a plasma OES subsystem that includes;

one or more first OES optical detectors configured to have a first line-of-sight view of plasma over a substrate on a substrate holder in an etch chamber of a plasma processing system;

one or more second OES optical detectors configured to have a second line-of-sight view of plasma in the etch chamber, wherein, relative to each other, the first line-of-sight view and second line-of-sight view intersect within the etch chamber;

a computed tomographic reconstruction system configured to generate a computed tomographic reconstruction of chemical species of the plasma, wherein the generation of the computed tomographic reconstruction includes;

obtaining light measurements from light received from intersecting views of the first and second line-of-sight views;

identifying chemical species in the plasma based on the obtained light measurements;

determining spatial locations of the identified chemical species in the plasma based on the obtained light measurements;

associating the determined spatial locations in the plasma for one or more of the identified chemical species; and

storing a tomographic reconstruction based on the association of the determined spatial locations in the plasma with the respective one or more of the identified chemical species.

14. A plasma OES system as recited in claim 13, wherein, relative to each other, the first line-of-sight view and second line-of-sight view are non-coextensive, non-parallel, and non-orthogonal.

15. A plasma OES system as recited in claim 13, wherein the light measurements obtained includes intensity of light.

16. A plasma OES system as recited in claim 13, wherein the light measurements obtained includes light measurements for particular wavelengths of light or wherein the light measurements obtained includes light measurements for a particular band of wavelengths of light.

17. A plasma OES system as recited in claim 13, wherein:

multiple first OES optical detectors form a first array, wherein a central axis of each OES optical detector of the first array is configured in parallel alignment with the other optical detectors of the first array;

multiple second OES optical detectors form a second array, wherein a central axis of each OES optical detector of the second array is configured in parallel alignment with the other optical detectors of the second array.

18. A plasma OES system as recited in claim 13, wherein the first and second line-of-sight views are separated by an acute or an obtuse angle.

19. A plasma OES system as recited in claim 13 further comprising:

a first viewport configured to provide the first line-of-sight view to the etch chamber for the one or more first OES optical detectors; and

a second viewport configured to provide the second line-of-sight view to the etch chamber for the one or more second OES optical detectors.

20. A plasma OES system as recited in claim 13 further comprising:

a first viewport configured to provide the first line-of-sight view to the etch chamber for the one or more first OES optical detectors; and

a second viewport configured to provide the second line-of-sight view to the etch chamber for the one or more second OES optical detectors;

wherein the first and second viewport have a width at least as wide as a width of the substrate holder.

21. A plasma OES system as recited in claim 13, wherein each OES optical detector includes one spectrometer that is configured to observe one ray from the etch chamber, wherein the ray shares a common central axis with its optical detector;

or

wherein each OES optical detector includes multiple spectrometers, each spectrometer of each OES optical detector is configured to observe one ray from the etch chamber;

or

wherein each OES optical detector includes multiple spectrometers, wherein the spectrometers of each OES optical detector collectively observe a fan of rays from the etch chamber.

22. A plasma OES system as recited in claim 13, further comprising one or more third OES optical detectors configured to have a third line-of-sight view of plasma in the etch chamber, wherein the third line-of-sight view intersects the first and second line-of-sight views within the etch chamber and the third line-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second line-of-sight views.

23. A plasma OES system as recited in claim 13, further comprising:

one or more third OES optical detectors configured to have a third line-of-sight view of plasma in the etch chamber, wherein the third line-of-sight view intersects the first and second line-of-sight views within the etch chamber and the third line-of-sight view is non-coextensive, non-parallel, and non-orthogonal with either the first or second line-of-sight views; and

a third viewport configured to provide the third line-of-sight view to the etch chamber for the one or more third OES optical detectors.

24. A method that facilitates computed tomographic reconstruction of plasma during plasma processing of a substrate in a plasma etch chamber of a plasma processing system, the method comprising:

obtaining light measurements from a collection of optical detectors configured to receive incoming rays from plasma over a substrate on a substrate holder in an etch chamber of a plasma processing system, wherein the rays form an intersecting grid within the plasma;

generating a computed tomographic reconstruction of chemical species of the plasma, wherein the generating includes;

identifying chemical species in the plasma based on the obtained light measurements;

determining spatial locations of the identified chemical species in the plasma based on the obtained light measurements; and

associating the determined spatial locations in the plasma for one or more of the identified chemical species; and

storing a tomographic reconstruction based on the association of the determined spatial locations in the plasma with the respective one or more of the identified chemical species.