Waveguide modulator structures
First Claim
1. An optoelectronic device, comprising:
- a substrate;
a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising;
a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions; and
crystalline cladding layer, on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, wherein the crystalline cladding layer has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).
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Abstract
An optoelectronic device and method of making the same. In some embodiments, the optoelectronic device includes a substrate, a Mach-Zehnder waveguide modulator, and an epitaxial crystalline cladding layer. The Mach-Zehnder waveguide modulator includes a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, each of the left and right optical waveguides including a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion. The epitaxial crystalline cladding layer is on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, and has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).
103 Citations
20 Claims
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1. An optoelectronic device, comprising:
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a substrate; a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising;
a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions; andcrystalline cladding layer, on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, wherein the crystalline cladding layer has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. An optoelectronic device, formed on a silicon-on-insulator wafer comprising a substrate, an insulating layer, and a silicon-on-insulator layer, the silicon-on-insulator layer comprising:
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a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising;
a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions; anda cladding layer, formed of a different material from the material of the insulating layer, on top of the substrate and beneath the junction region of the left optical waveguide or the junction region of the right optical waveguide, or both, wherein the cladding layer has a refractive index which is less than a refractive index of the respective junction region(s) such that an optical mode of the optoelectronic device is confined inside the respective junction region(s), and wherein the insulating layer does not extend below the respective junction region(s).
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20. An optoelectronic device, comprising:
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a substrate; a Mach-Zehnder waveguide modulator, the Mach-Zehnder waveguide modulator comprising;
a left arm including a left optical waveguide, and a right arm including a right optical waveguide, wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions; andcrystalline cladding layer, on top of the substrate and beneath the junction region of the left optical waveguide and/or the junction region of the right optical waveguide, wherein the crystalline cladding layer has a refractive index which is less than a refractive index of the respective junction region(s), such that optical power is confined to the respective junction region(s).
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Specification