Ebeam universal cutter

• US 10,216,087 B2
• Filed: 12/19/2014
• Issued: 02/26/2019
• Est. Priority Date: 06/13/2014
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Borodovsky, Yan A., Nelson, Donald W., Phillips, Mark C.
• Primary Examiner(s): Patel, Reema
• Assistant Examiner(s): Christopher, Steven M
• Application Number:
  US15/122,622
• Publication Number:
  US 20170102615A1
• Time in Patent Office: 1,530 Days
• Field of Search: None
• CPC Class Codes: G03F 7/2037 Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
• CPC Class Codes: H01J 2237/0435 Multi-aperture
• CPC Class Codes: H01J 2237/0453 multiple apertures
• CPC Class Codes: H01J 2237/303 Electron or ion optical systems
• CPC Class Codes: H01J 2237/30422 Data compression
• CPC Class Codes: H01J 2237/30438 Registration
• CPC Class Codes: H01J 2237/31762 Computer and memory organisation
• CPC Class Codes: H01J 2237/31764 Dividing into sub-patterns
• CPC Class Codes: H01J 37/045 Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
• CPC Class Codes: H01J 37/3026 Patterning strategy
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography
• CPC Class Codes: H01J 37/3177 Multi-beam, e.g. fly's eye, comb probe
• CPC Class Codes: H01L 21/0277 Electrolithographic processes
• CPC Class Codes: H01L 21/31144 using masks

Abstract

Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

Claims

1. A blanker aperture array (BAA) for an e-beam tool, the BAA comprising:

a first column of openings along a first direction; and

a second column of openings along the first direction and staggered from the first column of openings, the first and second columns of openings together forming an array having a pitch in the first direction, wherein a scan direction of the BAA is along a second direction, orthogonal to the first direction, and wherein the pitch of the array corresponds to half a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

2. The BAA of claim 1, wherein the first column of openings is a first single column of openings aligned in the first direction, and the second column of openings is a second single column of openings aligned in the first direction.

3. The BAA of claim 1, wherein, when scanned along the second direction, the openings of the first column of openings do not overlap with the openings of the second column of openings.

4. The BAA of claim 1, wherein, when scanned along the second direction, the openings of the first column of openings slightly overlap with the openings of the second column of openings.

5. The BAA of claim 1, wherein the first and second columns of openings are first and second columns of apertures formed in a thin slice of silicon.

6. The BAA of claim 5, wherein one or more of the apertures of the first and second columns of apertures has metal there around.

7. The BAA of claim 1, wherein the pitch of the array corresponds to an approximately 10 nanometer e-beam spot size pitch, and the minimal pitch layout of the target pattern of lines is approximately 20 nanometers.

8. The BAA of claim 1, wherein the first and second columns of openings amount of a total 8192 apertures formed in a thin slice of silicon.