Process-sensitive metrology systems and methods

• US 10,216,096 B2
• Filed: 06/06/2016
• Issued: 02/26/2019
• Est. Priority Date: 08/14/2015
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Lee, Myungjun, Smith, Mark D., Kapasi, Sanjay, Pandev, Stilian, Sanko, Dzmitry, Subrahmanyan, Pradeep, Levy, Ady
• Primary Examiner(s): Kim, Peter B
• Application Number:
  US15/174,111
• Publication Number:
  US 20170045826A1
• Time in Patent Office: 995 Days
• Field of Search: 355 67
• CPC Class Codes: G03F 7/70091 Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
• CPC Class Codes: G03F 7/70558 Dose control, i.e. achievement of a desired dose
• CPC Class Codes: G03F 7/70641 Focus

Abstract

A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

Claims

1. A lithography system, comprising:

an illumination source including an off-axis illumination pole, wherein the off-axis illumination pole is separated from an optical axis by a known offset distance along an offset direction, wherein the pattern mask includes a first pattern element segmented with a focus-sensitive pitch along a segmentation direction and a second pattern element segmented with a focus-insensitive pitch along the segmentation direction; and

a set of projection optics configured to expose a sample with an image corresponding to the pattern mask based on illumination from the illumination source to generate exposed features, wherein the focus-sensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mask based on the focus-sensitive pitch is asymmetrically distributed in a pupil plane of the set of projection optics, wherein widths of segments of the first pattern element are selected such that at least some segments of the first pattern element along the segmentation direction are separated by a sub-resolution distance smaller than a resolution of the set of projection optics, wherein segments of the first pattern element separated by the sub-resolution distance are exposed as merged features, wherein exposed features on the sample corresponding to the first pattern element include one or more indicators of a focal position of the sample during exposure, wherein the focus-insensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mask based on the focus-insensitive pitch is symmetrically distributed in the pupil plane, wherein exposed features on the sample corresponding to the second pattern element are independent of the focal position of the sample during exposure, wherein differences between the first pattern element and the second pattern element along the segmentation direction with respect to the one or more indicators are indicative of the focal position of the sample during exposure.

2. The lithography system of claim 1, wherein the offset direction is the segmentation direction.

3. The lithography system of claim 1, wherein the segmentation direction is a first segmentation direction, wherein the first pattern element is further segmented with the focus-sensitive pitch along a second segmentation direction perpendicular to the first segmentation direction, wherein the offset direction is different than the first segmentation direction and the second segmentation direction.

4. The lithography system of claim 3, wherein the one or more indicators of the focal position of the sample include one or more indicators measurable along the first segmentation direction and one or more indicators measurable along the second segmentation direction.

5. The lithography system of claim 1, wherein the off-axis illumination pole is a first off-axis illumination pole, of wherein the illumination source further includes a second off-axis illumination pole symmetric to the first off-axis illumination pole along the offset direction, wherein illumination from the second off-axis illumination pole diffracted by the first pattern element is asymmetrically distributed in the pupil plane, wherein illumination from the second off-axis illumination pole diffracted by the second pattern element is symmetrically distributed in the pupil plane, wherein a combined distribution of illumination in the pupil plane associated with the first off-axis illumination pole and the second off-axis illumination pole is symmetric.

6. The lithography system of claim 5, wherein the illumination from the first off-axis illumination pole diffracted by the first pattern element and illumination from the second off-axis illumination pole diffracted by the first pattern element are distributed in a non-overlapping pattern in the pupil plane.

7. The lithography system of claim 5, wherein the one or more indicators of the focal position of the sample comprises:

at least one of sidewall angles or dimensions along the segmentation direction of the exposed features corresponding to segments of the first pattern element.

8. The lithography system of claim 1, wherein at least some segments of the first pattern element comprise:

two or more sub-elements separated by the sub-resolution distance having different widths along the segmentation direction such that the two or more sub-elements are exposed as the merged features, wherein the merged features are asymmetric.

9. The lithography system of claim 1, wherein the one or more indicators of the focal position of the sample comprise:

positions of the exposed features corresponding to segments of the first pattern element, wherein displacements along the segmentation direction of the exposed features corresponding to the first pattern element with respect to exposed features corresponding to the second pattern element are indicative of the focal position.

10. The lithography system of claim 1, wherein the first pattern element is further segmented by the focus-insensitive pitch, wherein the first pattern element comprises:

two or more element groups distributed with the focus-insensitive pitch, wherein at least some element groups of the two or more element groups include two or more sub-elements distributed with the focus-sensitive pitch and separated with the sub-resolution distance such that the at least some element groups are exposed as the merged features.

11. The lithography system of claim 1, wherein the pattern mask comprises:

a substantially transparent substrate; and

a substantially opaque material.

12. The lithography system of claim 11, wherein the substantially opaque material includes a metal.

13. The lithography system of claim 1, wherein the pattern mask comprises:

at least one of a binary pattern mask element or a patterned phase mask.

14. The lithography system of claim 1, wherein the one or more indicators of the focal position of the sample during exposure comprise:

at least one of pattern placement, sidewall angles, or dimensions along the segmentation direction of the exposed features corresponding to segments of the first pattern element.

15. A metrology system, comprising:

a sample stage configured to support a substrate with a metrology target disposed upon the substrate, wherein the metrology target corresponds to an image of a pattern mask generated by a lithography system including an off-axis illumination pole, wherein the off-axis illumination pole is separated from an optical axis by a known offset distance along an offset direction, wherein the pattern mask comprises;

a first pattern element segmented with a focus-sensitive pitch along a segmentation direction, wherein the focus-sensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mask based on the focus-sensitive pitch is asymmetrically distributed in a pupil plane of the lithography system during exposure, wherein widths of segments of the first pattern element are selected such that at least some segments of the first pattern element along the segmentation direction are separated by a sub-resolution distance smaller than a resolution of the set of projection optics, wherein segments of the first pattern element separated by the sub-resolution distance are exposed as merged features, wherein features on the metrology target associated with the first pattern element include one or more indicators of a focal position of the sample in the lithography system; and

a second pattern element segmented with a focus-insensitive pitch along the segmentation direction, wherein the focus-insensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mark based on the focus-insensitive pitch is symmetrically distributed in the pupil plane, wherein features of the metrology target associated with the second pattern element are independent of the focal position of the sample during exposure;

at least one metrology illumination source configured to illuminate the metrology target;

at least one detector configured to receive illumination from the metrology target; and

at least one controller communicatively coupled to the detector and configured to determine the focal position of the metrology target, the lithography system based on differences between features of the metrology target associated with the first pattern element and the second pattern element with respect to the one or more indicators.

16. The metrology system of claim 15, wherein the illumination from the metrology target includes at least one of reflected illumination, scattered illumination, or emitted illumination.

17. The metrology system of claim 15, wherein the one or more indicators of the focal position of the metrology target comprise:

positions of the features of the metrology target corresponding to segments of the first pattern element, wherein displacements along the segmentation direction of the features of the metrology target corresponding to the first pattern element with respect to features of the metrology target corresponding to the second pattern element are indicative of the focal position.

18. A method for determining a position of a sample along an optical axis of a lithography system, comprising:

generating an image of a pattern mask with a lithography system including an off-axis illumination pole, wherein the off-axis illumination pole is separated from an optical axis by a known offset distance along an offset direction, wherein the pattern mask comprises;

a first pattern element segmented with a focus-sensitive pitch along a segmentation direction, wherein the focus-sensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mask based on the focus-sensitive pitch is asymmetrically distributed in a pupil plane of the lithography system, wherein widths of segments of the first pattern element are selected such that at least some segments of the first pattern element along the segmentation direction are separated by a sub-resolution distance smaller than a resolution of the set of projection optics, wherein segments of the first pattern element separated by the sub-resolution distance are exposed as merged features, wherein features on the metrology target associated with the first pattern element include one or more indicators of a focal position of the sample in the lithography system during exposure; and

a second pattern element segmented with a focus-insensitive pitch along the segmentation direction, wherein the focus-insensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mark based on the focus-insensitive pitch is symmetrically distributed in the pupil plane, wherein features of the metrology target associated with the second pattern element are independent of the focal position of the sample during exposure;

measuring the one or more indicators of the focal position using a metrology system; and

determining the focal position location of the sample along the optical axis of the set of projection optics based on differences between features of the metrology target associated with the first pattern element and the second pattern element with respect to the one or more indicators.

19. A metrology target, comprising:

a first segmented feature segmented along a segmentation direction, the first segmented feature corresponding to an image of a first pattern element of a pattern mask exposed by a lithography system including an off-axis illumination pole, wherein the off-axis illumination pole is separated from an optical axis by a known offset distance along an offset direction, wherein a position of the first segmented feature along the segmentation direction is indicative of a focal position of the metrology target in the lithography system when exposed, wherein the first pattern element is segmented with the focus-sensitive pitch, wherein the first pattern element includes two or more element groups distributed with a focus-insensitive pitch, wherein at least some element groups of the two or more element groups includes two or more sub-elements distributed with a focus-sensitive pitch, wherein the focus-sensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mask based on the focus-sensitive pitch is asymmetrically distributed in a pupil plane of the lithography system, wherein widths of two or more sub-elements are selected such that at least some of the two or more sub-elements are separated by a sub-resolution distance smaller than a resolution of the set of projection optics, wherein the at least some of the two or more sub-elements are exposed as merged features; and

a second segmented feature segmented along the segmentation direction, the second feature corresponding to an image of a second pattern element of a pattern mask exposed by the lithography system contemporaneously with the first pattern element, wherein a position of the second segmented feature is independent of the focal position of the metrology target in the lithography system when exposed, wherein the second pattern element is segmented with the focus-insensitive pitch, wherein the focus-insensitive pitch is selected based on the known offset distance such that illumination from the off-axis illumination pole diffracted by the pattern mask based on the focus-insensitive pitch is symmetrically distributed in a pupil plane of the lithography system, wherein positional differences between the first segmented feature and the second segmented feature are indicative of the focal position of the sample in the lithography system when exposed.