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Switching circuit for RF currents

  • US 10,217,608 B2
  • Filed: 08/03/2017
  • Issued: 02/26/2019
  • Est. Priority Date: 02/18/2015
  • Status: Active Grant
First Claim
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1. A switching circuit comprising:

  • a first switch coupled to a first switch terminal, the first switch comprising at least one gallium nitride high-electron mobility transistor (GaN HEMT);

    a second switch coupled in series with the first switch and a second switch terminal, the second switching comprising a GaN HEMT; and

    at least one power source configured to provide power to the first switch and the second switch;

    wherein the second switch is configured to drive the first switch ON and OFF.

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