Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
First Claim
1. A plasma processing apparatus for processing semiconductor substrates, comprising:
- a plasma processing chamber in which a semiconductor substrate is processed;
a process gas source in fluid communication with the plasma processing chamber adapted to supply a process gas into the plasma processing chamber;
a RF energy source adapted to energize the process gas into a plasma state in the plasma processing chamber;
a vacuum source adapted to exhaust process gas and byproducts of the plasma processing from the plasma processing chamber; and
a substrate support assembly comprising;
a dielectric layer including a clamping electrode;
a heater layer attached to the underside of the dielectric layer, the heater layer including a plurality of planar thermal zones; and
an optical fiber laterally extending in a channel embedded in the dielectric layer and arranged between the clamping electrode and the heater layer, the optical fiber including a plurality of gratings configured to measure temperatures of respective thermal zones,wherein the optical fiber is configured to be coupled to a temperature monitoring arrangement to monitor temperatures of the plurality of planar thermal zones measured by the plurality of gratings;
wherein the temperature monitoring arrangement includes a light source and a detector, the light source to provide near infrared, infrared, natural, or ultraviolet light into the optical fiber and the detector to measure light exiting the optical fiber; and
wherein the temperature monitoring arrangement is configured to determine the temperatures of the plurality of planar thermal zones based on parameters of the light entering and exiting the optical fiber.
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Accused Products
Abstract
A plasma processing apparatus for processing semiconductor substrates comprises a plasma processing chamber in which a semiconductor substrate is processed. A process gas source is in fluid communication with the plasma processing chamber and is adapted to supply a process gas into the plasma processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the plasma processing chamber. Process gas and byproducts of the plasma processing are exhausted from the plasma processing chamber through a vacuum port. At least one component of the plasma processing apparatus comprises a laterally extending optical fiber beneath a plasma exposed surface of the component wherein spatial temperature measurements of the surface are desired to be taken, and a temperature monitoring arrangement coupled to the optical fiber so as to monitor temperatures at different locations along the optical fiber.
61 Citations
13 Claims
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1. A plasma processing apparatus for processing semiconductor substrates, comprising:
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a plasma processing chamber in which a semiconductor substrate is processed; a process gas source in fluid communication with the plasma processing chamber adapted to supply a process gas into the plasma processing chamber; a RF energy source adapted to energize the process gas into a plasma state in the plasma processing chamber; a vacuum source adapted to exhaust process gas and byproducts of the plasma processing from the plasma processing chamber; and a substrate support assembly comprising; a dielectric layer including a clamping electrode; a heater layer attached to the underside of the dielectric layer, the heater layer including a plurality of planar thermal zones; and an optical fiber laterally extending in a channel embedded in the dielectric layer and arranged between the clamping electrode and the heater layer, the optical fiber including a plurality of gratings configured to measure temperatures of respective thermal zones, wherein the optical fiber is configured to be coupled to a temperature monitoring arrangement to monitor temperatures of the plurality of planar thermal zones measured by the plurality of gratings; wherein the temperature monitoring arrangement includes a light source and a detector, the light source to provide near infrared, infrared, natural, or ultraviolet light into the optical fiber and the detector to measure light exiting the optical fiber; and wherein the temperature monitoring arrangement is configured to determine the temperatures of the plurality of planar thermal zones based on parameters of the light entering and exiting the optical fiber. - View Dependent Claims (2, 3, 4)
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5. A substrate support assembly comprising:
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a dielectric layer including a clamping electrode; a heater layer attached to the underside of the dielectric layer, the heater layer including a plurality of planar thermal zones; and an optical fiber laterally extending in a channel embedded in the dielectric layer and arranged between the clamping electrode and the heater layer, the optical fiber including a plurality of gratings configured to measure temperatures of respective thermal zones, wherein the optical fiber is configured to be coupled to a temperature monitoring arrangement to monitor temperatures of the plurality of planar thermal zones measured by the plurality of gratings; wherein the temperature monitoring arrangement includes a light source and a detector, the light source to provide near infrared, infrared, natural, or ultraviolet light into the optical fiber and the detector to measure light exiting the optical fiber; and wherein the temperature monitoring arrangement is configured to determine the temperatures of the plurality of planar thermal zones based on parameters of the light entering and exiting the optical fiber. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13)
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Specification