Light-emitting device and input/output device

• US 10,217,764 B2
• Filed: 12/27/2017
• Issued: 02/26/2019
• Est. Priority Date: 05/02/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Nakamura, Daiki, Ikeda, Hisao, Toyotaka, Kouhei
• Primary Examiner(s): Jahan, Bilkis
• Assistant Examiner(s): Barzykin, Victor V
• Application Number:
  US15/855,074
• Publication Number:
  US 20180138201A1
• Time in Patent Office: 426 Days
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H10K 2102/00 Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/127 comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
• CPC Class Codes: H10K 59/1315 comprising structures specially adapted for lowering the resistance
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/40 OLEDs integrated with touch screens

Abstract

To provide a light-emitting device or an input/output device with little unevenness in display luminance or high reliability and to provide an input/output device with high detection sensitivity, a light-emitting device is configured to include a first substrate, a light-emitting element over the first substrate, a first conductive layer over the light-emitting element, a first insulating layer over the first conductive layer, a second conductive layer over the first insulating layer, and a second substrate over the second conductive layer. The light-emitting element includes a first electrode over the first substrate, a layer containing a light-emitting organic compound over the first electrode, and a second electrode over the layer containing a light-emitting organic compound. The second electrode is electrically connected to the first and second conductive layers. The first conductive layer and the second electrode transmit light emitted from the light-emitting element. The resistance of the second conductive layer is lower than that of the second electrode.

Claims

1. A light-emitting device comprising:

a first substrate;

a transistor over the first substrate;

a first insulating layer over the transistor;

a first conductive layer over the first insulating layer;

a second insulating layer covering an edge portion of the first conductive layer;

a layer comprising an organic compound over the first conductive layer and the second insulating layer;

a second conductive layer over the layer;

a bonding layer over the second conductive layer;

a third conductive layer over and in contact with the bonding layer and the second conductive layer;

a third insulating layer over the third conductive layer;

a fourth conductive layer over the third insulating layer and the third conductive layer; and

a second substrate over the fourth conductive layer,

wherein the bonding layer comprises a resin,

wherein the first conductive layer is electrically connected to the transistor,

wherein the third conductive layer is electrically connected to the fourth conductive layer,

wherein the third insulating layer comprises an opening, and

wherein the fourth conductive layer and the opening of the third insulating layer overlap each other.

2. The light-emitting device according to claim 1,

wherein a resistance of the fourth conductive layer is lower than a resistance of the second conductive layer.

3. The light-emitting device according to claim 1,

wherein the third conductive layer comprises a metal oxide layer, and

wherein the fourth conductive layer comprises a metal layer.

4. The light-emitting device according to claim 1, wherein the first substrate and the second substrate are flexible.

5. The light-emitting device according to claim 1, further comprising a coloring layer between the third insulating layer and the third conductive layer.

6. The light-emitting device according to claim 1, further comprising a light-blocking layer between the third insulating layer and the third conductive layer.

7. The light-emitting device according to claim 6,

wherein the light-blocking layer comprises an opening, and

wherein the opening of the light-blocking layer and the fourth conductive layer overlap each other.

8. An input/output device comprising:

the light-emitting device according to claim 1; and

a sensor portion comprising a capacitor,

wherein the light-emitting device and the sensor portion overlap each other.

9. A light-emitting device comprising:

a first substrate;

a transistor over the first substrate;

a first insulating layer over the transistor;

a first conductive layer over the first insulating layer;

a second insulating layer covering an edge portion of the first conductive layer;

a layer comprising an organic compound over the first conductive layer and the second insulating layer;

a second conductive layer over the layer;

a bonding layer over the second conductive layer;

a third conductive layer over and in contact with the bonding layer and the second conductive layer;

a third insulating layer over the third conductive layer;

a fourth conductive layer over the third insulating layer and the third conductive layer; and

a second substrate over the fourth conductive layer,

wherein the bonding layer comprises a resin,

wherein the first conductive layer is electrically connected to the transistor,

wherein the third conductive layer is electrically connected to the fourth conductive layer,

wherein the third insulating layer comprises an opening,

wherein the fourth conductive layer and the opening of the third insulating layer overlap each other, and

wherein the second insulating layer and the opening of the third insulating layer overlap each other.

10. The light-emitting device according to claim 9,

wherein a resistance of the fourth conductive layer is lower than a resistance of the second conductive layer.

11. The light-emitting device according to claim 9,

wherein the third conductive layer comprises a metal oxide layer, and

wherein the fourth conductive layer comprises a metal layer.

12. The light-emitting device according to claim 9, wherein the first substrate and the second substrate are flexible.

13. The light-emitting device according to claim 9, further comprising a coloring layer between the third insulating layer and the third conductive layer.

14. The light-emitting device according to claim 9, further comprising a light-blocking layer between the third insulating layer and the third conductive layer.

15. The light-emitting device according to claim 14,

wherein the light-blocking layer comprises an opening, and

wherein the opening of the light-blocking layer and the fourth conductive layer overlap each other.

16. An input/output device comprising:

the light-emitting device according to claim 9; and

a sensor portion comprising a capacitor,

wherein the light-emitting device and the sensor portion overlap each other.