Light emitting diode module for surface mount technology and method of manufacturing the same

• US 10,217,912 B2
• Filed: 11/27/2017
• Issued: 02/26/2019
• Est. Priority Date: 07/02/2012
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Dae Woong, Kang, Min Woo, Lee, Joon Sub, Kim, Hyun A, Kim, Kyoung Wan, Kim, Chang Yeon
• Primary Examiner(s): Coleman, William
• Application Number:
  US15/823,325
• Publication Number:
  US 20180287021A1
• Time in Patent Office: 456 Days
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05173 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/0518 Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05671 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/0568 : Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/06051 : Bonding areas having different shapes
• CPC Class Codes: H01L 2224/0616 : Random array, i.e. array with no symmetry
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32227 : the layer connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/3316 : Random layout, i.e. layout with no symmetry
• CPC Class Codes: H01L 2224/83399 : Material
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 24/00 : Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/053 : Oxides composed of metals from groups of the periodic table
• CPC Class Codes: H01L 2924/0542 : 12th Group
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 : Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

Claims

1. A light emitting diode (LED) comprising:

a substrate;

a stacked structure including a first semiconductor layer, an active layer formed over the first semiconductor layer and a second semiconductor layer formed over the active layer;

an insulation layer formed over the stacked structure and shaped to expose selective portions of the second semiconductor layer; and

a reflective layer formed over the stacked structure and contacting the second semiconductor layer through the exposed selective portions of the second semiconductor layer, the reflective layer electrically coupled to the second semiconductor layer.

2. The LED of claim 1, wherein the stacked structure has a side surface inclined with respect to a top surface of the substrate.

3. The LED of claim 1, wherein the insulation layer includes a masking region partially covering a top surface of the second semiconductor layer and an opening region partially exposing the top surface of the second semiconductor layer.

4. The LED of claim 1, wherein the insulation layer covers a side surface of the second semiconductor layer.

5. The LED of claim 1, wherein the insulation layer includes a stack including dielectric materials having different refractive indexes from each other.

6. The LED of claim 1, wherein the insulation layer includes a distributed Bragg reflector.

7. The LED of claim 1, wherein the reflective layer covers 90% or more of a top surface of the second semiconductor layer.

8. The LED of claim 1, wherein the reflective layer forms an ohmic contact with the second semiconductor layer through the exposed selective portions of the second semiconductor layer.

9. The LED of claim 1, further comprising an additional insulation layer covering a side surface of the stacked structure and shaped to expose a portion of the first semiconductor layer.

10. The LED of claim 1, further comprising an additional insulation layer covering the stacked structure and shaped to expose the reflective layer.

11. The LED of claim 3, wherein the opening region includes openings spaced apart from one another and surrounded by the masking region.

12. The LED of claim 3, wherein a ratio of an area of the opening region to an area of the masking region varies along one direction of the insulation layer.

13. The LED of claim 9, further comprising a first metal layer contacting the first semiconductor layer and forming an ohmic contact with the first semiconductor layer through the exposed portion of the first semiconductor layer.

14. A light emitting diode (LED) comprising:

a substrate;

a first semiconductor layer formed over the substrate;

a mesa formed over the first semiconductor layer and patterned to expose a top surface of the first semiconductor layer, the mesa including an active layer and a second semiconductor layer formed over the active layer;

an insulation layer formed over the mesa and including an opening to expose the second semiconductor layer of the mesa;

a reflective electrode layer formed over the mesa to fill the opening of the insulation layer, the reflective electrode layer electrically coupled to the second semiconductor layer of the mesa through the openings of the insulation layer.

15. The LED of claim 14, wherein the exposed top surface of the first semiconductor layer is positioned at a lower level than a top surface of the first semiconductor layer of the mesa.

16. The LED of claim 14, wherein the insulation layer includes a masking region partially covering a top surface of the second semiconductor layer of the mesa and an opening region partially exposing the top surface of the second semiconductor layer of the mesa.

17. The LED of claim 14, further comprising:

a first additional insulation layer formed over the mesa and patterned to form a first pad region; and

a second additional insulation layer formed over the reflection electrode layer and patterned to form a second pad region.

18. The LED of claim 16, wherein a ratio of an area of the opening region to an area of the masking region varies along one direction of the insulation layer.

19. The LED of claim 17, further comprising a first pad formed over the first pad region, and a second pad formed over the second pad region.

20. The LED of claim 17, further comprising a metal layer formed between the first additional insulation layer and the second additional insulation layer and electrically and physically contacting the first semiconductor layer.

21. The LED of claim 20, wherein the metal layer is insulated from the reflective electrode layer.