Method for manufacturing magnetic memory cells
First Claim
1. A method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a selection element comprising a two-terminal selector, the method comprising the steps of:
- depositing a selector film stack for the two-terminal selector on a substrate;
depositing a magnetic memory element film stack for the magnetic memory element on top of the selector film stack, the magnetic memory element film stack including a magnetic reference layer film and a magnetic free layer film with an insulating tunnel junction layer film interposed therebetween;
etching the magnetic memory element film stack with an etch mask formed thereon to remove at least a first portion of the insulating tunnel junction layer film not covered by the etch mask to form a magnetic memory element pillar that includes a second portion of the insulating tunnel junction layer film;
depositing a first conforming dielectric layer over the magnetic memory element pillar, including a sidewall thereof, and surrounding surface;
etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the second portion of the insulating tunnel junction layer film of the magnetic memory element pillar; and
etching the selector film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.
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Accused Products
Abstract
The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector. The method includes the steps of depositing a selector film stack on a substrate; depositing a magnetic memory element film stack on top of the selector film stack; etching the magnetic memory element film stack with an etch mask formed thereon to remove at least an insulating tunnel junction layer in the magnetic memory element film stack not covered by the etch mask, thereby forming a magnetic memory element pillar; depositing a first conforming dielectric layer over the magnetic memory element pillar, including a sidewall thereof, and surrounding surface; etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the insulating tunnel junction layer of the magnetic memory element pillar; and etching the selector film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.
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Citations
11 Claims
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1. A method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a selection element comprising a two-terminal selector, the method comprising the steps of:
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depositing a selector film stack for the two-terminal selector on a substrate; depositing a magnetic memory element film stack for the magnetic memory element on top of the selector film stack, the magnetic memory element film stack including a magnetic reference layer film and a magnetic free layer film with an insulating tunnel junction layer film interposed therebetween; etching the magnetic memory element film stack with an etch mask formed thereon to remove at least a first portion of the insulating tunnel junction layer film not covered by the etch mask to form a magnetic memory element pillar that includes a second portion of the insulating tunnel junction layer film; depositing a first conforming dielectric layer over the magnetic memory element pillar, including a sidewall thereof, and surrounding surface; etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the second portion of the insulating tunnel junction layer film of the magnetic memory element pillar; and etching the selector film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification