×

Method for manufacturing magnetic memory cells

  • US 10,217,934 B2
  • Filed: 08/24/2018
  • Issued: 02/26/2019
  • Est. Priority Date: 06/09/2017
  • Status: Active Grant
First Claim
Patent Images

1. A method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a selection element comprising a two-terminal selector, the method comprising the steps of:

  • depositing a selector film stack for the two-terminal selector on a substrate;

    depositing a magnetic memory element film stack for the magnetic memory element on top of the selector film stack, the magnetic memory element film stack including a magnetic reference layer film and a magnetic free layer film with an insulating tunnel junction layer film interposed therebetween;

    etching the magnetic memory element film stack with an etch mask formed thereon to remove at least a first portion of the insulating tunnel junction layer film not covered by the etch mask to form a magnetic memory element pillar that includes a second portion of the insulating tunnel junction layer film;

    depositing a first conforming dielectric layer over the magnetic memory element pillar, including a sidewall thereof, and surrounding surface;

    etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the second portion of the insulating tunnel junction layer film of the magnetic memory element pillar; and

    etching the selector film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×