CMOS-MEMS integrated device including multiple cavities at different controlled pressures and methods of manufacture

• US 10,221,065 B2
• Filed: 03/16/2017
• Issued: 03/05/2019
• Est. Priority Date: 06/27/2012
• Status: Active Grant

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Invensense Incorporated (TDK Corporation)
• Inventors: Lee, Daesung, Shin, Jongwoo, Shin, Jong Il, Smeys, Peter, Lim, Martin
• Primary Examiner(s): Inoussa, Mouloucoulaye
• Application Number:
  US15/461,270
• Publication Number:
  US 20170183225A1
• Time in Patent Office: 719 Days
• Field of Search: 257415, 257414, 257416, 257417, 257E23193, 257723, 257E2318, 257E21501, 438 48- 52, 438455-459, 438476
• CPC Class Codes: B81B 2201/0228 Inertial sensors
• CPC Class Codes: B81B 2207/017 Smart-MEMS not provided for in B81B2207/012 - B81B2207/015
• CPC Class Codes: B81B 7/0038 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: B81B 7/0041 maintaining a controlled atmosphere with techniques not provided for in B81B7/0038
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 1/00285 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: B81C 2203/035 Soldering
• CPC Class Codes: B81C 2203/0785 Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates

Abstract

An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.

Claims

1. A method of preparing a substrate, comprising:

depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections;

depositing conformally a second outgassing barrier layer, wherein in one of the two cross-sections a top surface of the outgassing source layer is not covered by the first and second outgassing barrier layers and in the other of the two cross-sections the outgassing source layer is encapsulated in the first and second outgassing barrier layers;

etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on at least one sidewall of the outgassing source layer; and

bonding a second substrate to a first substrate comprising the substrate to create bonded substrates and to provide at least one of a first sealed enclosure or a second sealed enclosure, wherein the first sealed enclosure includes one of the two cross-sections, and wherein the second sealed enclosure includes the other of the two cross-sections.

2. The method of claim 1, wherein the depositing and patterning the first outgassing barrier layer comprises depositing the first outgassing barrier layer and etching the first outgassing barrier layer using at least one mask.

3. The method of claim 2, wherein the etching the first outgassing barrier layer using at least one mask comprises selectively exposing the outgassing source layer.

4. The method of claim 1, wherein the bonding the second substrate to the first substrate comprises bonding the second substrate to the first substrate, wherein at least one of the first substrate or the second substrate includes an integrated circuit.

5. The method of claim 4, further comprising:

raising the temperature of the at least one of the first substrate or the second substrate during the bonding.

6. The method claim 5, further comprising:

releasing gas from the outgassing source layer in the at least one of the first sealed enclosure or the second sealed enclosure during the bonding.

7. The method of claim 6, wherein the releasing gas from the outgassing source layer comprises raising the temperature of the outgassing source layer to facilitate the releasing gas.

8. The method claim 6, further comprising:

annealing the bonded substrates to facilitate increasing pressure in the at least one of the first sealed enclosure or the second sealed enclosure.

9. The method claim 8, wherein the increasing pressure in the at least one of the first sealed enclosure or the second sealed enclosure includes increasing pressure in the at least one of the first sealed enclosure or the second sealed enclosure where the outgassing source layer is not covered by either of the first or the second outgassing barrier layers greater than that of the other of the at least one of the first sealed enclosure or the second sealed enclosure where the outgassing source layer is encapsulated in the first and second outgassing barrier layers.

10. The method claim 1, wherein the bonding the second substrate to the first substrate comprises bonding the second substrate to the first substrate with an eutectic bond.

11. The method of claim 1, wherein the depositing and patterning the outgassing source layer comprises depositing a temperature-activated outgassing source layer.

12. The method of claim 11, wherein the depositing the temperature-activated outgassing source layer comprises depositing a non-gettering out-gassing substance in a fixed location on the substrate.

13. The method of claim 12, wherein the depositing the non-gettering out-gassing substance comprises depositing a substance configured to desorb one or more gases as a result of raising its temperature.

14. The method of claim 1, wherein the etching the second outgassing barrier layer comprises directionally etching the second outgassing barrier layer using at least one other mask.

15. The method of claim 1, wherein the etching the second outgassing barrier layer comprises etching the second outgassing barrier layer using a blanket etch.