Optoelectronic device

• US 10,222,677 B2
• Filed: 12/06/2017
• Issued: 03/05/2019
• Est. Priority Date: 02/24/2014
• Status: Active Grant

• Current Assignee: Rockley Photonics Limited
• Original Assignee: Rockley Photonics Limited
• Inventors: Yu, Guomin, Abediasl, Hooman, Lerose, Damiana, Nagra, Amit Singh, Srinivasan, Pradeep, Jones, Haydn Frederick, Rickman, Andrew George, Zilkie, Aaron John
• Primary Examiner(s): Dinh, Jack
• Application Number:
  US15/833,990
• Publication Number:
  US 20180101082A1
• Time in Patent Office: 454 Days
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/212 Mach-Zehnder type
• CPC Class Codes: G02F 1/2257 the optical waveguides being made of semiconducting material
• CPC Class Codes: G02F 2201/12 electrode
• CPC Class Codes: G02F 2202/10 semiconductor
• CPC Class Codes: G02F 2202/101 Ga×As and alloy
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/03048 comprising a nitride compounds, e.g. InGaN
• CPC Class Codes: H01L 31/0312 including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
• CPC Class Codes: H01L 31/1105 the device being a bipolar phototransistor
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

Claims

1. A detector remodulator comprising:

a silicon on insulator (SOI) chip having a silicon substrate, an insulator layer and a topmost silicon layer;

a detector coupled to a first input waveguide;

a modulator, coupled to a second input waveguide and an output waveguide; and

an electrical circuit connecting the detector to the modulator;

wherein the modulator includes a waveguide including;

a modulation region at which a semiconductor junction is set across the waveguide of the modulator, the junction comprising a first doped region and a second doped region;

wherein;

the electrical circuit is connected to a first electrical pad on a first side of the modulation region, the first electrical pad forming a contact directly to the first doped region,

the electrical circuit is connected to a second electrical pad on a second side of the modulation region, the second electrical pad forming a contact directly to the second doped region, and

the electrical circuit comprises a signal path from the detector to the modulator, the signal path having a portion in an integrated circuit; and

wherein

the modulator is located at a portion of the SOI chip at which the topmost silicon layer and the insulator of the silicon on insulator chip have been replaced by a cladding layer on top of the substrate;

the modulation region of the modulator comprising an optically active region, above the cladding layer;

wherein the cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the modulator is confined to the optically active region.

2. The detector remodulator of claim 1, wherein the detector is located at a second portion of the SOI chip at which the topmost silicon layer and the insulator layer of the silicon on insulator chip have been replaced by a cladding layer on top of the substrate, the detector comprising an optically active region, above the cladding layer;

and

wherein the cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the detector is confined to the optically active region.

3. The detector remodulator of claim 1, wherein the optically active region is formed of:

SiGeSn, GeSn, InGaNAs, or InGaNAsSb; and

wherein the optically active region is formed of Si_xGe_1-x-ySn_y where 5%≤

x≤

20%, 1%≤

y≤

10%.

4. The detector remodulator of claim 1, wherein the cladding layer is formed of a crystalline epitaxial material.

5. The detector remodulator of claim 4, wherein the cladding layer is formed of silicon or SiGe and is epitaxially grown silicon or SiGe.

6. The detector remodulator of claim 1, further comprising a silicon seed layer between the cladding layer and the optically active region.

7. The detector remodulator of claim 1, wherein the first input waveguide, the detector, the modulator, the second input waveguide, and output waveguide are arranged within the same horizontal plane as one another.

8. The detector remodulator of claim 1, wherein the semiconductor junction of the modulation region is a p-i-n junction having a p-doped region, an intrinsic region, and an n-doped region, wherein the first electrical pad forms a contact directly to the p-doped region of the p-i-n junction and the second electrical pad forms a contact directly to the n-doped region of the p-i-n junction.

9. The detector remodulator of claim 1, wherein the detector comprises a waveguide portion with a semiconductor junction set horizontally across the waveguide portion, and wherein the semiconductor junction of the detector is a p-i-n junction.

10. The detector remodulator of claim 1, wherein the modulator is an electro-absorption modulator (EAM).

11. The detector remodulator of claim 1, wherein the modulator is a Mach-Zehnder modulator (MZM);

and wherein each arm of the MZM includes a modulation region and a phase shift region in addition to the modulation region; and

wherein, in each arm, the phase shift region has a lower speed than the modulation region.

12. The detector remodulator of claim 1, wherein the electrical circuit is surface mounted.

13. A detector remodulator comprising:

a silicon on insulator (SOI) chip having a silicon substrate, an insulator layer and a topmost silicon layer;

a detector coupled to a first input waveguide;

a modulator, coupled to a second input waveguide and an output waveguide; and

an electrical circuit connecting the detector to the modulator;

wherein the modulator includes a waveguide including;

a modulation region at which a semiconductor junction is set across the waveguide of the modulator, the junction comprising a first doped region and a second doped region;

wherein;

the electrical circuit is connected to a first electrical pad on a first side of the modulation region, the first electrical pad forming a contact directly to the first doped region,

the electrical circuit is connected to a second electrical pad on a second side of the modulation region, the second electrical pad forming a contact directly to the second doped region, and

the electrical circuit comprises a signal path from the detector to the modulator, the signal path having a portion in an integrated circuit; and

wherein

the detector is located at a portion of the SOI chip at which the topmost silicon layer and the insulator of the silicon on insulator chip have been replaced by a cladding layer on top of the substrate;

the detector comprising an optically active region above the cladding layer;

wherein the cladding layer has a refractive index which is less than a refractive index of the optically active region, such that an optical mode of the detector is confined to the optically active region.

14. The detector remodulator of claim 13, wherein the cladding layer is formed of a crystalline epitaxial material.

15. The detector remodulator of claim 14, wherein the cladding layer is formed of silicon or SiGe and is epitaxially grown silicon or SiGe.

16. The detector remodulator of claim 13, wherein the electrical circuit is surface mounted.