Chamber with flow-through source
First Claim
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1. A semiconductor processing chamber comprising:
- a chamber housing at least partially defining a processing region of the semiconductor processing chamber; and
an inductively coupled plasma source positioned within the chamber housing, wherein the inductively coupled plasma source comprises a conductive material within a dielectric material, and wherein the conductive material comprises a copper tube configured to receive a fluid flowed within the copper tube.
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Abstract
Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.
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Citations
17 Claims
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1. A semiconductor processing chamber comprising:
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a chamber housing at least partially defining a processing region of the semiconductor processing chamber; and an inductively coupled plasma source positioned within the chamber housing, wherein the inductively coupled plasma source comprises a conductive material within a dielectric material, and wherein the conductive material comprises a copper tube configured to receive a fluid flowed within the copper tube. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An inductively coupled plasma source comprising:
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a first plate defining at least a portion of a channel within the first plate, wherein the first plate comprises a dielectric material, and wherein the first plate defines apertures through the first plate; and a conductive material seated within the at least a portion of the channel, wherein the conductive material is characterized by a spiral or coil configuration, wherein the conductive material is coupled with an RF source, and wherein a central axis of each aperture is normal to the at least a portion of the channel. - View Dependent Claims (15, 16)
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17. A semiconductor processing chamber comprising:
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a chamber housing at least partially defining an interior region of the semiconductor processing chamber, wherein the chamber housing includes a lid assembly including an inlet for receiving precursors into the semiconductor processing chamber; a showerhead positioned within the chamber housing, wherein the showerhead at least partially defines a semiconductor processing region from above; and an inductively coupled plasma source positioned within the semiconductor processing region, wherein the inductively coupled plasma source comprises a conductive material within a dielectric material.
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Specification