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Chamber with flow-through source

  • US 10,224,180 B2
  • Filed: 04/02/2018
  • Issued: 03/05/2019
  • Est. Priority Date: 10/04/2016
  • Status: Expired due to Fees
First Claim
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1. A semiconductor processing chamber comprising:

  • a chamber housing at least partially defining a processing region of the semiconductor processing chamber; and

    an inductively coupled plasma source positioned within the chamber housing, wherein the inductively coupled plasma source comprises a conductive material within a dielectric material, and wherein the conductive material comprises a copper tube configured to receive a fluid flowed within the copper tube.

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