Mechanical suppression of parasitic plasma in substrate processing chamber
First Claim
1. A system for reducing parasitic plasma in a semiconductor process, comprising:
- a first surface of a conducting structure; and
a plurality of dielectric layers that are vertically stacked between an electrode and the first surface,wherein the first surface and the electrode have substantially different electrical potentials,wherein the plurality of dielectric layers defines;
a first gap between the electrode and one of the plurality of dielectric layers,a second gap between adjacent ones of the plurality of dielectric layers, anda third gap between a last one of the plurality of dielectric layers and the first surface, andwherein a number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process.
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Abstract
A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have substantially different electrical potentials. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process.
89 Citations
21 Claims
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1. A system for reducing parasitic plasma in a semiconductor process, comprising:
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a first surface of a conducting structure; and a plurality of dielectric layers that are vertically stacked between an electrode and the first surface, wherein the first surface and the electrode have substantially different electrical potentials, wherein the plurality of dielectric layers defines; a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface, and wherein a number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A pedestal system for a semiconductor process, comprising:
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a pedestal platen that supports a substrate, that is made of a non-conducting material and that includes an electrode embedded therein; a first surface of a conducting structure having a substantially different electrical potential than the electrode; N dielectric layers that are vertically stacked between the pedestal platen and the first surface, where N is an integer that is greater than one; and wherein the N dielectric layers define; a first gap between the pedestal platen and the N dielectric layers, a second gap between adjacent ones of the N dielectric layers, and a third gap between the N dielectric layers and the first surface, and wherein N and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification