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Selector device incorporating conductive clusters for memory applications

  • US 10,224,367 B2
  • Filed: 05/18/2016
  • Issued: 03/05/2019
  • Est. Priority Date: 05/18/2016
  • Status: Active Grant
First Claim
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1. A memory device comprising an array of memory cells, each of said memory cells including a memory element connected to a two-terminal selector element, said two-terminal selector element comprising a first electrode and a second electrode with a switching layer interposed therebetween, said switching layer including a plurality of metal-rich clusters embedded in a matrix, wherein said switching layer has single resistance state in absence of an applied voltage thereto.

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