Selector device incorporating conductive clusters for memory applications
First Claim
1. A memory device comprising an array of memory cells, each of said memory cells including a memory element connected to a two-terminal selector element, said two-terminal selector element comprising a first electrode and a second electrode with a switching layer interposed therebetween, said switching layer including a plurality of metal-rich clusters embedded in a matrix, wherein said switching layer has single resistance state in absence of an applied voltage thereto.
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Accused Products
Abstract
The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a switching layer interposed therebetween. The switching layer includes a plurality of metal-rich clusters embedded in a nominally insulating matrix. One or more conductive paths are formed in the switching layer when an applied voltage to the memory cell exceeds a threshold level. Each of the memory cells may further include an intermediate electrode interposed between the memory element and the two-terminal selector element. The two-terminal selector element may further include a third electrode formed between the first electrode and the switching layer, and a fourth electrode formed between the second electrode and the switching layer.
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Citations
20 Claims
- 1. A memory device comprising an array of memory cells, each of said memory cells including a memory element connected to a two-terminal selector element, said two-terminal selector element comprising a first electrode and a second electrode with a switching layer interposed therebetween, said switching layer including a plurality of metal-rich clusters embedded in a matrix, wherein said switching layer has single resistance state in absence of an applied voltage thereto.
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20. A memory device comprising an array of memory cells, each of said memory cells including a memory element connected to a two-terminal selector element, said two-terminal selector element comprising a first electrode and a second electrode with a switching layer interposed therebetween, said switching layer including a plurality of metal-rich clusters embedded in a matrix, wherein each of said first and second electrodes is made of a material selected from the group consisting of iridium, ruthenium, and any combinations thereof.
Specification