Light emitting device

• US 10,224,470 B2
• Filed: 08/25/2016
• Issued: 03/05/2019
• Est. Priority Date: 04/26/2013
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Yoneda, Akinori, Kinouchi, Akiyoshi, Kasai, Hisashi, Aihara, Yoshiyuki, Sasa, Hirokazu, Nakamura, Shinji
• Primary Examiner(s): Pizarro, Marcos D
• Assistant Examiner(s): Crite, Antonio
• Application Number:
  US15/247,188
• Publication Number:
  US 20160365498A1
• Time in Patent Office: 922 Days
• Field of Search: 438 91, 438106, 438197, 438706, 438745, 257 79, 257288, 257656, 257778, 257774, 257 6, 257 53, 257126, 257127, 257352, 257366, 257499
• CPC Class Codes: H01L 21/60 Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68372 used to support a device or wafer when forming electrical connections thereto when forming bonding pads H01L24/03; when forming bump connectors H01L24/11; when forming layer connectors H01L24/27
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2221/68386 Separation by peeling
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/2101 Structure
• CPC Class Codes: H01L 2224/2105 Shape
• CPC Class Codes: H01L 2224/211 Disposition
• CPC Class Codes: H01L 2224/215 Material
• CPC Class Codes: H01L 2224/2401 Structure
• CPC Class Codes: H01L 2224/24011 Deposited, e.g. MCM-D type
• CPC Class Codes: H01L 2224/2405 Shape
• CPC Class Codes: H01L 2224/2413 : Connecting within a semiconductor or solid-state body
• CPC Class Codes: H01L 2224/245 : Material
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48095 : Kinked
• CPC Class Codes: H01L 2224/48101 : Connecting bonding areas at the same height, e.g. horizontal bond
• CPC Class Codes: H01L 2224/4813 : Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48647 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/821 : Forming a build-up interconnect
• CPC Class Codes: H01L 2224/82106 : by subtractive methods
• CPC Class Codes: H01L 2224/85947 : by mechanical means, e.g. "pull-and-cut", pressing, stamping
• CPC Class Codes: H01L 2224/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 : Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12035 : Zener diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3511 : Warping
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 2933/005 : relating to encapsulations
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/24 : of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/387 : with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 : Materials therefor
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/502 : Wavelength conversion materials
• CPC Class Codes: H01L 33/54 : having a particular shape
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

Claims

1. A method for producing a light emitting device comprising:

providing a light emitting element comprising a semiconductor layer and a plurality of electrodes disposed over the semiconductor layer, the plurality of electrodes including a first electrode and a second electrode;

forming a bump stack on the first electrode, the bump stack comprising a plurality of bumps;

forming a single bump on the second electrode;

electrically connecting the bump stack on the first electrode with the single bump on the second electrode using a wire, wherein the wire is connected to the bump stack at a location between a first bump and a second bump of the bump stack;

forming a resin layer over the semiconductor layer to surround the bump stack; and

removing a pert of the resin layer to expose a part of the bump stack from an upper surface of the resin layer,

wherein the step of electrically connecting the bump of the bump stack with the single bump using the wire is performed using a bonding machine.

2. The method for producing alight emitting device according to claim 1, wherein the part of the resin layer is removed by at least one selected from the group consisting of grinding, polishing and cutting.

3. The method for producing a light emitting device according to claim 1, wherein the bump stack is formed on the first electrode by bump bonding.

4. The method for producing a light emitting device according to claim 1, wherein a location at which the wire is connected to the bump stack on the first electrode is higher than a location at which the wire is connected to the single bump on the second electrode.

5. The method for producing a light emitting device according to claim 1, wherein the wire includes a first portion that extends in a lateral direction from the bump stack;

and a second portion that extends from the first portion to the single bump on the second electrode in a direction transverse to the lateral direction.

6. The method for producing a light emitting device according to claim 1, wherein the wire is made of gold, silver, or copper.

7. The method for producing a light emitting device according to claim 1, wherein the wire is connected to the bump stack at a third bump located between the first bump and the second bump.

8. The method for producing a light emitting device according to claim 1, further comprising:

forming a metal film on an upper surface of the resin layer, the metal film being electrically connected with a part of the bump stack.

9. The method for producing a light emitting device according to claim 8, wherein the metal film is formed by sputtering.

10. The method for producing a light emitting device according to claim 8, wherein the metal film is made of copper, copper tin, gold, or gold tin.

11. A method for producing a light emitting device comprising:

providing a light emitting element comprising a semiconductor layer and a plurality of electrodes disposed over the semiconductor layer, the plurality of electrodes including a first electrode and a second electrode;

forming a bump stack on the first electrode, the bump stack comprising a plurality of bumps;

forming a single bump on the second electrode;

electrically connecting the bump stack on the first electrode with the single bump on the second electrode using a wire, wherein the wire is connected to the bump stack at a location between a first bump and a second bump of the bump stack;

forming a resin layer over the semiconductor layer to surround the bump stack; and

removing a part of the resin layer to expose a part of the bump stack from an upper surface of the resin layer,

wherein the bump stack is formed on the first electrode by bump bonding.

12. The method for producing a light emitting device according to claim 11, wherein the part of the resin layer is removed by at Least one selected from the group consisting of grinding, polishing and cutting.

13. The method for producing a light emitting device according to claim 11, wherein a location at which the wire is connected to the bump stack on the first electrode is higher than a location at which the wire is connected to the single bump on the second electrode.

14. The method for producing a light emitting device according to claim 11, wherein the wire includes a first portion that extends in a lateral direction from the bump stack, and a second portion that extends from the first portion to the single bump on the second electrode in a direction transverse to the lateral direction.

15. The method for producing a light emitting device according to claim 11, wherein the wire is made of gold, silver, or copper.

16. The method for producing a light emitting device according to claim 11, wherein the wire is connected to the bump stack at a third bump located between the first bump and the second bump.

17. The method for producing a light emitting device according to claim 11, further comprising:

forming a metal film on an upper surface of the resin layer, the metal film being electrically connected with a part of the bump stack.

18. The method for producing a light emitting device according to claim 17, wherein the metal film is formed by sputtering.

19. The method for producing a light emitting device according to claim 17, wherein the metal film is made of copper, copper tin, gold, or gold tin.