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Two-terminal reversibly switchable memory device

  • US 10,224,480 B2
  • Filed: 10/30/2017
  • Issued: 03/05/2019
  • Est. Priority Date: 02/06/2004
  • Status: Active Grant
First Claim
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1. An apparatus, comprising:

  • a first electrode;

    a second electrode; and

    a memory element (ME) positioned between the first electrode and the second electrode, the ME electrically coupled in series with the first and second electrodes, the ME comprising;

    a mixed valence oxide in contact with the first electrode;

    a mixed electronic ionic conductor in contact with the mixed valence oxide; and

    a repository in contact with the mixed electronic ionic conductor and the second electrode, wherein a conductivity of the ME changes in response to a first voltage applied across the first electrode and the second electrode.

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