Two-terminal reversibly switchable memory device
First Claim
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1. An apparatus, comprising:
- a first electrode;
a second electrode; and
a memory element (ME) positioned between the first electrode and the second electrode, the ME electrically coupled in series with the first and second electrodes, the ME comprising;
a mixed valence oxide in contact with the first electrode;
a mixed electronic ionic conductor in contact with the mixed valence oxide; and
a repository in contact with the mixed electronic ionic conductor and the second electrode, wherein a conductivity of the ME changes in response to a first voltage applied across the first electrode and the second electrode.
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Abstract
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.
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Citations
18 Claims
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1. An apparatus, comprising:
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a first electrode; a second electrode; and a memory element (ME) positioned between the first electrode and the second electrode, the ME electrically coupled in series with the first and second electrodes, the ME comprising; a mixed valence oxide in contact with the first electrode; a mixed electronic ionic conductor in contact with the mixed valence oxide; and a repository in contact with the mixed electronic ionic conductor and the second electrode, wherein a conductivity of the ME changes in response to a first voltage applied across the first electrode and the second electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An apparatus, comprising:
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a first electrode; a second electrode; and a memory element (ME) positioned between the first electrode and the second electrode, the ME electrically coupled in series with the first electrode and the second electrode, the ME comprising; a mixed valence oxide coupled with the first electrode; and a mixed electronic ionic conductor coupled with the mixed valence oxide and the second electrode, wherein a conductivity of the ME changes responsive to a first voltage applied across the first electrode and the second electrode; wherein responsive to the first voltage the mixed electronic ionic conductor holds ions from the mixed valence oxide. - View Dependent Claims (15, 16, 17)
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18. A memory device comprising:
array of memory cells arranged in a plurality of lines in a first direction and a plurality of lines in a second direction, wherein each memory cell of the array comprises; a first electrode; a second electrode; and a memory element (ME) positioned between the first electrode and the second electrode, the ME electrically coupled in series with the first electrode and the second electrode, the ME comprising; a mixed valence oxide coupled with the first electrode; and a mixed electronic ionic conductor coupled with the mixed valence oxide and the second electrode, wherein a conductivity of the ME changes responsive to a first voltage applied across the first electrode and the second electrode; wherein responsive to the first voltage the mixed electronic ionic conductor holds ions from the mixed valence oxide.
Specification