Magnetically enhanced low temperature-high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond like films

• US 10,227,691 B2
• Filed: 09/09/2016
• Issued: 03/12/2019
• Est. Priority Date: 12/21/2015
• Status: Active Grant

• Current Assignee: Ionquest Corp.
• Original Assignee: IonQuest LLC
• Inventors: Abraham, Bassam Hanna, Chistyakov, Roman
• Primary Examiner(s): McDonald, Rodney G
• Application Number:
  US15/261,197
• Publication Number:
  US 20170175248A1
• Time in Patent Office: 914 Days
• Field of Search: 20419212, 20429806, 20429808, 20429816, 20429817, 20429818, 20429819, 118723 E, 118723 ER, 427569, 427571
• CPC Class Codes: C23C 14/0057 using reactive gases other than O2, H2O, N2, NH3 or CH4
• CPC Class Codes: C23C 14/0605 Carbon
• CPC Class Codes: C23C 14/14 Metallic material, boron or silicon
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/3485 using pulsed power to the target
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/354 Introduction of auxiliary energy into the plasma
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32825 Working under atmospheric pressure or higher
• CPC Class Codes: H01J 37/3405 Magnetron sputtering
• CPC Class Codes: H01J 37/3417 Arrangements
• CPC Class Codes: H01J 37/3426 Material
• CPC Class Codes: H01J 37/3435 Target holders (includes backing plates and endblocks)
• CPC Class Codes: H01J 37/345 Magnet arrangements in particular for cathodic sputtering apparatus material of magnets or magnets in general H01F1/00, H01F7/00
• CPC Class Codes: H01J 37/3452 Magnet distribution
• CPC Class Codes: H01J 37/3455 Movable magnets
• CPC Class Codes: H01J 37/3464 Operating strategies
• CPC Class Codes: H01J 37/3467 Pulsed operation, e.g. HIPIMS
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 : formed in openings in a dielectric
• CPC Class Codes: H01L 21/76871 : Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
• CPC Class Codes: H01L 21/76879 : by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 21/76882 : Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H01L 23/5226 : Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers

Abstract

A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.

Claims

1. A magnetically enhanced plasma-chemical vapor deposition (LT-HDP-CVD) apparatus comprising:

a hollow cathode assembly;

an anode positioned on top of the hollow cathode assembly, thereby forming a gap between the anode and the hollow cathode assembly;

a cathode magnet assembly;

a row of magnets that generate a magnetic field in the gap and a magnetic field on a surface of the hollow cathode assembly with the cathode magnet assembly such that magnetic field lines are substantially perpendicular to the hollow cathode assembly;

a power supply that generates a train of negative voltage pulses that generates a pulse electric field in the gap perpendicular to the magnetic field lines, the pulse electric field igniting and sustaining plasma during a pulse, a frequency, duration, and amplitude of the train of negative voltage pulses being selected to increase a degree of dissociation of the feed gas molecules atoms.

2. The magnetically enhanced LT-HDP-CVD apparatus, as defined by claim 1, further comprising a pole piece positioned adjacent to the gap and connected to the power supply.

3. The magnetically enhanced LT-HDP-CVD apparatus, as defined by claim 1 further comprising a radio frequency (RF) power supply connected to the hollow cathode assembly, the RF power supply generating output voltage with a frequency is in a range of about 1 MHz to 100 MHz.

4. The magnetically enhanced LT-HDP-CVD apparatus, as defined by claim 1 further comprising:

a substrate holder; and

an RF substrate bias power supply connected to the substrate holder.

5. The magnetically enhanced LT-HDP-CVD apparatus, as defined by claim 4 further comprising an inductor connected between the substrate holder and ground.

6. The magnetically enhanced LT-HDP-CVD apparatus, as defined by claim 1 further comprising:

a substrate holder; and

a substrate bias power supply connected to the substrate holder, the substrate bias power supply generating a bias voltage on the substrate in a range of about −

10 V to −

2000 V.

7. The magnetically enhanced LT-HDP-CVD apparatus, as defined by claim 1, wherein the magnetic field in the gap is in a range of about 50 G to 5000 G.

8. The magnetically enhanced LT-HDP-CVD apparatus, as defined by claim 1 wherein the cathode magnet assembly is rotatable.

9. A method of magnetically enhanced plasma-chemical vapor deposition (LT-HDP-CVD) comprising:

providing a hollow cathode;

forming a gap between the hollow cathode and an anode;

positioning a cathode magnet assembly;

generating a magnetic field in the gap such that magnetic field lines are substantially perpendicular to a surface of the hollow cathode;

positioning a pole piece in the gap;

providing a pulse power to the hollow cathode that ignites and sustains volume discharge; and

generating a train of negative voltage pulses, a frequency, duration, and amplitude of the train of negative voltage pulses being selected to increase a degree of dissociation and ionization of feed gas molecules and atoms.

10. The method of magnetically enhanced LT-HDP-CVD deposition, as defined by claim 9, further comprising a power supply connected to the pole piece.

11. The method of magnetically enhanced LT-HDP-CVD deposition, as defined by claim 9 further comprising:

connecting an RF power supply to the hollow cathode; and

generate output voltage using the RF power supply with a frequency in a range of about 1 MHz and 100 MHz.

12. The method of magnetically enhanced LT-HDP-CVD deposition, as defined by claim 9, wherein the power supply generates an output voltage with a value in a range of about −

100 V to −

3000 V.

13. The method of magnetically enhanced LT-HDP-CVD deposition, as defined by claim 9, further comprising connecting a substrate bias power supply to a substrate holder;

and

generating bias voltage on the substrate in a range of about −

10 V to −

2000 V.

14. The method of magnetically enhanced LT-HDP-CVD deposition, as defined by claim 9, wherein the magnetic field in the gap is in a range of about 50 G to 10000 G.

15. The method of magnetically enhanced LT-HDP-CVD deposition, as defined by claim 9, wherein the hollow cathode comprises carbon.