Packaging optoelectronic components and CMOS circuitry using silicon-on-insulator substrates for photonics applications

• US 10,229,898 B2
• Filed: 12/11/2017
• Issued: 03/12/2019
• Est. Priority Date: 08/13/2015
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Budd, Russell A., Meghelli, Mounir, Orcutt, Jason Scott, Plouchart, Jean-Olivier
• Primary Examiner(s): Connelly, Michelle R
• Application Number:
  US15/837,774
• Publication Number:
  US 20180114785A1
• Time in Patent Office: 456 Days
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12069 Organic material
• CPC Class Codes: G02B 2006/12123 Diode
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/1221 made from organic materials
• CPC Class Codes: G02B 6/124 Geodesic lenses or integrated gratings
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/34 utilising prism or grating G02B6/293 takes precedence
• CPC Class Codes: G02B 6/4204 the coupling comprising intermediate optical elements, e.g. lenses, holograms encapsulated active devices H01S5/02208, H01L33/52
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/4274 Electrical aspects G02B6/4263 and G02B6/4265 take precedence
• CPC Class Codes: G02B 6/428 containing printed circuit boards [PCB]
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2223/58 Structural electrical arrangements for semiconductor devices not otherwise provided for
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/485 : consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/49894 : Materials of the insulating layers or coatings
• CPC Class Codes: H01L 23/585 : comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 25/117 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/167 : comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/1203 : the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01S 5/021 : Silicon based substrates
• CPC Class Codes: H01S 5/0215 : Bonding to the substrate
• CPC Class Codes: H01S 5/02325 : Mechanically integrated components on mount members or optical micro-benches
• CPC Class Codes: H01S 5/0237 : by soldering
• CPC Class Codes: H01S 5/02469 : Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
• CPC Class Codes: H01S 5/026 : Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/1032 : Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/11 : Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/18341 : Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 : Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/1838 : Reflector bonded by wafer fusion or by an intermediate compound

Abstract

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

Claims

1. A package structure, comprising:

a photonics package comprising;

a first integrated circuit chip comprising an insulating layer, an active silicon layer disposed adjacent to the insulating layer, and a BEOL (back-end-of-line) structure disposed on the active silicon layer;

an integrated optical waveguide structure patterned from the active silicon layer of the first integrated circuit chip;

a capping layer disposed on the insulating layer of the first integrated circuit chip, wherein the capping layer comprises an etched opening which exposes a portion of the insulating layer of the first integrated circuit chip and which is aligned to a portion of the integrated optical waveguide structure;

an optoelectronics device disposed within the etched opening of the capping layer and mounted on the portion of the insulating layer of the first integrated circuit chip exposed by the etched opening of the capping layer and in alignment with said portion of the integrated optical waveguide structure; and

an interposer bonded to the BEOL structure of the first integrated circuit chip, the interposer comprising at least one substrate having a plurality of conductive through vias and wiring to provide electrical connections to the BEOL structure.

2. The package structure of claim 1, wherein the integrated optical waveguide structure is adiabatically coupled to the optoelectronics device through the insulating layer.

3. The package structure of claim 1, wherein the integrated optical waveguide structure comprises a first vertical grating coupler to couple light between the optical waveguide structure and the optoelectronics device.

4. The package structure of claim 1, wherein the optoelectronics device comprises at least one of a laser diode, a photodiode, a photonics device, and a combination thereof.

5. The package structure of claim 1, further comprising one or more conductive vias formed through the insulating layer and into the BEOL structure to provide electrical connections between the optoelectronics device and active circuitry of the first integrated circuit chip.

6. The package structure of claim 1, wherein the at least one substrate of the interposer is formed of a material comprising one of glass, high-resistivity silicon, and an insulator material.

7. The package structure of claim 1, wherein the capping layer is configured to prevent light from leaking out of the integrated optical waveguide structure through the insulating layer.

8. The package structure of claim 1, wherein the first integrated circuit chip comprises at least one of optical receiver circuitry and optical transmitter circuitry formed as part of the active silicon layer.

9. The package structure of claim 1, further comprising a flexible polymer waveguide having a waveguide core bonded directly to a portion of the insulating layer in alignment with an end portion of the integrated optical waveguide structure, wherein the waveguide core is adiabatically coupled to the end portion of the integrated optical waveguide structure through the insulating layer.

10. The package structure of claim 1, wherein the first integrated circuit chip is fabricated from a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises a bulk substrate layer, a buried oxide layer disposed on the bulk substrate layer, and the active silicon layer disposed on the buried oxide layer, wherein buried oxide layer comprises the insulating layer, and wherein the bulk substrate layer is removed during fabrication of the photonics package.

11. The package structure of claim 1, further comprising an optical fiber device, wherein the integrated optical waveguide structure of the first integrated circuit comprises a vertical grating coupler to couple light signals that are transmitted between the optical fiber device and the integrated optical waveguide structure.

12. The package structure of claim 1, further comprising a second integrated circuit chip, wherein the second integrated circuit chip is coupled to the photonics package, wherein the first integrated circuit chip of the photonics package comprises active circuitry coupled to the optoelectronics device, and wherein the second integrated circuit chip comprises a processor coupled to the active circuitry of the first integrated circuit chip.

13. The package structure of claim 12, further comprising an application board, wherein the second integrated circuit chip is flip-chip mounted to a first side of the application board, wherein the photonics package is flip-chip mounted to the application board by bonding the interposer of the photonics package to the first side of the application board, and wherein the application board comprises a plurality of high-speed transmission lines formed on the first side of the application board to enable electrical communication between the photonics package and the second integrated circuit chip.

14. The package structure of claim 12, wherein the second integrated circuit chip is coupled to the photonics package by flip-chip bonding the interposer of the photonics package to an active surface of the second integrated circuit chip.

15. The package structure of claim 14, wherein a heatsink is mounted to a surface of the second integrated chip opposite the active surface of the second integrated circuit chip.

16. The package structure of claim 12, further comprising:

a package interposer; and

an application board;

wherein the second integrated circuit chip is coupled to the photonics package by mounting the interposer of the photonics package to a first side of the package interposer and mounting the second integrated circuit chip to a second side of the package interposer, opposite the first side of the package interposer;

wherein the package interposer comprises electrical wiring and through vias to provide electrical connections between the photonics package and the second integrated circuit chip; and

wherein the application board is mounted to the first side of the package interposer.

17. The package structure of claim 12, wherein the active circuitry of the first integrated circuit chip comprises receiver circuitry coupled to the optoelectronics device, wherein the receiver circuitry comprises:

serializer/deserializer circuitry having an output port coupled to an input port of the processor of the second integrated circuit chip; and

transimpedance amplifier circuitry coupled between an input port of the serializer/deserializer circuitry and an output of the optoelectronics device;

wherein the optoelectronics device comprises a photodiode that converts a received optical signal into a current signal; and

wherein the transimpedance amplifier circuitry converts the current signal to a voltage signal that is processed by the serializer/deserializer circuitry.

18. The package structure of claim 12, wherein the active circuitry of the first integrated circuit chip comprises transmitter circuitry coupled to the optoelectronics device, wherein the transmitter circuitry comprises:

serializer/deserializer circuitry having an input port coupled to an output port of the processor of the second integrated circuit chip; and

laser driver circuitry coupled between an output port of the serializer/deserializer circuitry and an input of the optoelectronic device;

wherein the optoelectronics device comprises a laser diode device that generates an optical signal to be transmitted in response to modulation control signals output from the laser driver circuitry.

19. The package structure of claim 12, wherein the active circuitry of the first integrated circuit chip comprises transceiver circuitry coupled to first and second optoelectronics devices of the photonic package, wherein the transceiver circuitry comprises:

serializer/deserializer circuitry comprising an output port coupled to an input port of the processor of the second integrated circuit chip, and an input port coupled to an output port of the processor of the second integrated circuit chip;

transimpedance amplifier circuitry coupled between an input port of the serializer/deserializer circuitry and an output of the first optoelectronics device;

laser driver circuitry coupled between an output port of the serializer/deserializer circuitry and an input of the second optoelectronics device;

wherein the first optoelectronics device comprises a photodiode that converts a received optical signal into a current signal;

wherein the transimpedance amplifier circuitry converts the current signal output from the photodiode to a voltage signal that is processed by the serializer/deserializer circuitry; and

wherein the second optoelectronics device comprises a laser diode device that generates an optical signal to be transmitted in response to modulation control signals output from the laser driver circuitry.