Display device including oxide semiconductor layer
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating layer over the gate electrode;
an oxide semiconductor layer over the gate electrode with the gate insulating layer located between the oxide semiconductor layer and the gate electrode;
a channel protective layer over the oxide semiconductor layer;
a source region over the oxide semiconductor layer;
a drain region over the oxide semiconductor layer;
a source electrode over the source region and the channel protective layer; and
a drain electrode over the drain region and the channel protective layer,wherein the source region comprises an oxide semiconductor and comprises a nanocrystal,wherein the drain region comprises an oxide semiconductor and comprises a nanocrystal, andwherein the gate electrode is electrically connected to one of the source electrode and the drain electrode.
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Abstract
A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, a channel protective layer overlapping with a channel formation region of the first oxide semiconductor layer, and a pair of a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the channel protective layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
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Citations
16 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate electrode with the gate insulating layer located between the oxide semiconductor layer and the gate electrode; a channel protective layer over the oxide semiconductor layer; a source region over the oxide semiconductor layer; a drain region over the oxide semiconductor layer; a source electrode over the source region and the channel protective layer; and a drain electrode over the drain region and the channel protective layer, wherein the source region comprises an oxide semiconductor and comprises a nanocrystal, wherein the drain region comprises an oxide semiconductor and comprises a nanocrystal, and wherein the gate electrode is electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode; a gate insulating layer over the gate electrode; an oxide semiconductor layer over the gate electrode with the gate insulating layer located between the oxide semiconductor layer and the gate electrode; a channel protective layer over the oxide semiconductor layer; a source electrode over the channel protective layer; a drain electrode over the channel protective layer; a source region located between the oxide semiconductor layer and the source electrode, the source region comprising an oxide semiconductor; a drain region located between the oxide semiconductor layer and the drain electrode, the drain region comprising an oxide semiconductor, wherein the source region comprises a nanocrystal, wherein the drain region comprises a nanocrystal, and wherein the gate electrode is electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification