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Display device including oxide semiconductor layer

  • US 10,229,904 B2
  • Filed: 04/30/2015
  • Issued: 03/12/2019
  • Est. Priority Date: 09/19/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating layer over the gate electrode;

    an oxide semiconductor layer over the gate electrode with the gate insulating layer located between the oxide semiconductor layer and the gate electrode;

    a channel protective layer over the oxide semiconductor layer;

    a source region over the oxide semiconductor layer;

    a drain region over the oxide semiconductor layer;

    a source electrode over the source region and the channel protective layer; and

    a drain electrode over the drain region and the channel protective layer,wherein the source region comprises an oxide semiconductor and comprises a nanocrystal,wherein the drain region comprises an oxide semiconductor and comprises a nanocrystal, andwherein the gate electrode is electrically connected to one of the source electrode and the drain electrode.

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