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Semiconductor device including a multigate transistor formed with fin structure

  • US 10,229,908 B2
  • Filed: 09/19/2017
  • Issued: 03/12/2019
  • Est. Priority Date: 05/24/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a plurality of fins comprising a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the plurality of fins protruding from the substrate in a first direction, and spaced apart from one another in a second direction that intersects the first direction; and

    a plurality of trenches comprising a first trench, a second trench, a third trench and a fourth trench, each of the plurality of trenches being formed between adjacent fins of the plurality of fins,wherein variation of a first width of the first trench and a third width of the third trench is smaller than a first variation and variation of a second width of the second trench and a fourth width of the fourth trench is smaller than a second variation,wherein the second variation is greater than the first variation, andwherein variation of a first depth of the first trench and a third depth of the third trench is smaller than a third variation, and variation of a second depth of the second trench and a fourth depth of the fourth trench is smaller than a fourth variation, andwherein the fourth variation is greater than the third variation.

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