Resistor, display device, and electronic device
First Claim
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1. A resistor comprising:
- a first insulating layer over a substrate;
a second insulating layer over the first insulating layer;
a semiconductor layer over the second insulating layer;
a first electrode over the semiconductor layer;
a second electrode over the semiconductor layer;
a third insulating layer over the the first electrode and the second electrode; and
a fourth insulating layer over the third insulating layer,wherein the semiconductor layer is an oxide comprising indium, zinc, and a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf,wherein the third insulating layer comprises an opening,wherein the third insulating layer is in contact with a top surface of the first electrode and a top surface of the second electrode,wherein the fourth insulating layer comprises hydrogen, andwherein the fourth insulating layer is in contact with the semiconductor layer through the opening.
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Abstract
To provide a novel resistor. To provide a display device having a novel structure that can improve its reliability. To provide a display device having a novel structure that can reduce electrostatic discharge damages. The resistor includes a semiconductor layer and an insulating layer formed over the semiconductor layer, and the semiconductor layer is an oxide represented by an In-M-Zn oxide that contains at least indium (In), zinc (Zn), and M (M is a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf) and the insulating layer contains at least hydrogen.
156 Citations
21 Claims
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1. A resistor comprising:
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a first insulating layer over a substrate; a second insulating layer over the first insulating layer; a semiconductor layer over the second insulating layer; a first electrode over the semiconductor layer; a second electrode over the semiconductor layer; a third insulating layer over the the first electrode and the second electrode; and a fourth insulating layer over the third insulating layer, wherein the semiconductor layer is an oxide comprising indium, zinc, and a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf, wherein the third insulating layer comprises an opening, wherein the third insulating layer is in contact with a top surface of the first electrode and a top surface of the second electrode, wherein the fourth insulating layer comprises hydrogen, and wherein the fourth insulating layer is in contact with the semiconductor layer through the opening. - View Dependent Claims (2, 3, 4, 19, 20, 21)
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5. A display device comprising:
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a pixel portion; a driver circuit portion outside the pixel portion; and a protection circuit portion electrically connected to one or both of the pixel portion and the driver circuit portion, wherein the pixel portion comprises a pixel electrode and a first transistor electrically connected to the pixel electrode, wherein the driver circuit portion comprises a second transistor configured to control on state or off state of the first transistor, wherein each of the first transistor and the second transistor comprises a first oxide semiconductor layer in a channel formation region, wherein the protection circuit portion comprises an insulating layer and a second oxide semiconductor layer formed in the same process where the first oxide semiconductor layer is formed, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are each an oxide comprising indium, zinc, and a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf, wherein a concentration of hydrogen in the first oxide semiconductor layer is different from a concentration of hydrogen in the second oxide semiconductor layer, and wherein the insulating layer comprises hydrogen. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A display device comprising:
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a pixel portion; and a protection circuit portion electrically connected to the pixel portion, wherein the pixel portion comprises a pixel electrode and a first transistor electrically connected to the pixel electrode, wherein the first transistor comprises a first oxide semiconductor layer in a channel formation region, wherein the protection circuit portion comprises an insulating layer and a second oxide semiconductor layer formed in the same process where the first oxide semiconductor layer is formed, wherein the insulating layer is in contact with the second oxide semiconductor layer, wherein the insulating layer is not in contact with the first oxide semiconductor layer, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are each an oxide comprising indium, zinc, and a metal selected from the group consisting of Al, Ga, Ge, Y, Zr, Sn, La, Ce, and Hf, and wherein the insulating layer comprises hydrogen. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification