Photosensitive imaging devices and associated methods

• US 10,229,951 B2
• Filed: 08/10/2017
• Issued: 03/12/2019
• Est. Priority Date: 04/21/2010
• Status: Active Grant

• Current Assignee: SiOnyx, LLC (Black Silicon Holdings, Inc.)
• Original Assignee: SiOnyx, LLC (Black Silicon Holdings, Inc.)
• Inventors: Jiang, Jutao, McKee, Jeffrey, Pralle, Martin U.
• Primary Examiner(s): Jo, Taeho
• Application Number:
  US15/674,136
• Publication Number:
  US 20170358621A1
• Time in Patent Office: 579 Days
• Field of Search: 250330
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H04N 23/56 provided with illuminating means
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/135 based on four or more different wavelength filter elements
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith
• CPC Class Codes: H04N 25/745 Circuitry for generating timing or clock signals
• CPC Class Codes: H04N 25/771 comprising storage means other than floating diffusion

Abstract

A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

Claims

1. A monolithic sensor for detecting infrared and visible light, comprising:

a semiconductor substrate;

a semiconductor layer coupled to the semiconductor substrate, the semiconductor layer having a device surface opposite the semiconductor substrate;

a visible light photodiode formed at the device surface;

an infrared photodiode formed at the device surface in proximity to the visible light photodiode;

a light diffusing region associated with the infrared photodiode and positioned to interact with electromagnetic radiation; and

a global shutter coupled to said infrared photodiode and configured to activate signal integration in substantial synchronization with emission of infrared pulses generated by an infrared radiation source and to discontinue signal integration between said infrared pulses generated by said infrared radiation source.

2. The sensor of claim 1, wherein the light diffusing region is a textured region positioned between the infrared photodiode and the semiconductor substrate.

3. The sensor of claim 1, wherein the light diffusing region is a textured region, wherein the infrared photodiode is positioned between the textured region and the semiconductor substrate.

4. The sensor of claim 1, wherein the visible light photodiode comprises a plurality of visible light photodiodes each being configured to detect a different color of visible light.

5. The sensor of claim 1, wherein the infrared photodiode comprises a photodiode configured to detect infrared light having a wavelength of greater than 1000 nm.

6. The sensor of claim 1, further comprising an infrared narrow bandpass filter coupled to the infrared photodiode.

7. The sensor of claim 1, further comprising an image processor for combining a first output from the infrared light photodiode with a second output from the visible light photodiode to form a composite image.

8. The sensor of claim 1, further comprising circuitry for capturing signals generated by the infrared light photodiode in response to detection of a pulse of infrared light from an infrared light source.

9. The sensor of claim 8, further comprising circuitry for integrating the signals generated by the infrared light photodiode across multiple pulses of infrared light from the infrared light source to create a composite infrared signal image.

10. The sensor of claim 1, wherein said infrared light source is a laser source.

11. The sensor of claim 1, wherein operation of said visible light photodiode is independent from activation and deactivation of said infrared photodiode.

12. A system for detecting infrared and visible light, comprising:

an infrared radiation source for generating one or more pulses of infrared radiation; and

a monolithic sensor, comprising;

a semiconductor substrate;

a semiconductor layer coupled to the semiconductor substrate, the semiconductor layer having a device surface opposite the semiconductor substrate;

a visible light photodiode formed at the device surface;

an infrared photodiode formed at the device surface in proximity to the visible light photodiode;

a light diffusing region associated with the infrared photodiode and positioned to interact with electromagnetic radiation; and

a global shutter coupled to said infrared photodiode and configured to activate signal integration in substantial synchronization with emission of infrared pulses generated by said infrared radiation source and to discontinue signal integration between said infrared pulses generated by said infrared radiation source.

13. The system of claim 12, wherein the light diffusing region is a textured region positioned between the infrared photodiode and the semiconductor substrate.

14. The system of claim 12, wherein the light diffusing region is a textured region, wherein the infrared photodiode is positioned between the textured region and the semiconductor substrate.

15. The system of claim 12, wherein the visible light photodiode comprises a plurality of visible light photodiodes each being configured to detect a different color of visible light.

16. The system of claim 12, wherein the infrared photodiode comprises a photodiode configured to detect infrared light having a wavelength of greater than 1000 nm.

17. The system of claim 12, further comprising an infrared narrow bandpass filter coupled to the infrared photodiode.

18. The system of claim 12, further comprising an image processor for combining a first output from the infrared light photodiode with a second output from the visible light photodiode to form a composite image.

19. The system of claim 12, further comprising circuitry for capturing signals generated by the infrared light photodiode in response to detection of a pulse of infrared light from an infrared light source.

20. The system of claim 19, further comprising circuitry for integrating the signals generated by the infrared light photodiode across multiple pulses of infrared light from the infrared light source to create a composite infrared signal image.

21. The system of claim 12, wherein said infrared light source is a laser source.

22. The system of claim 12, wherein operation of said visible light photodiode is independent from activation and deactivation of said infrared photodiode.

23. The system of claim 12, wherein the infrared light source and the infrared diode are co-located.

24. The system of claim 12, wherein the infrared light source and the infrared diode are separately located.